VESD05A6A-HAF www.vishay.com Vishay Semiconductors 6-Line ESD Protection Diode Array in LLP75 FEATURES Ultra compact LLP75-7L package 6 54 6-line ESD protection 7 Low leakage current I < 0.1 A R Low load capacitance C = 13 pF D 1 2 3 ESD immunity acc. IEC 61000-4-2 20517 19371 15 kV contact discharge 1 15 kV air discharge MARKING (example only) Working voltage range V = 5 V RWM e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) XX (no Sn) YY 21001 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Dot = pin 1 marking XX = date code YY = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A6A-HAF VESD05A6A-HAF-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A6A-HAF LLP75-7L AT 4.2 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A6A-HAF PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2) I 2.5 A PPM acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse current BiSy-mode: each input (pin 1 - pin 6) to any other input pin. I 2.5 A PPM Pin 2 not connected. Acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2) P 33 W PP acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse power BiSy-mode: each input (pin 1 - pin 6) to any other input pin. P 43 W PP Pin 2 not connected. Acc. IEC 61000-4-5 t = 8/20 s single shot p Contact 15 kV Acc. IEC 61000-4-2 10 pulses discharge BiAs-mode: each input (pin 1 - pin 6) to ground V ESD Air (pin 2) 15 kV discharge ESD immunity Contact Acc. IEC 61000-4-2 10 pulses 10 kV discharge BiSy-mode: each input (pin 1 - pin 6) to any V ESD other input pin. Air 10 kV Pin 2 not connected discharge Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.6, 07-Jan-2018 Document Number: 81880 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A6A-HAF www.vishay.com Vishay Semiconductors APPLICATION NOTE With the VESD05A6A-HAF 6 different signal or data lines can be clamped to ground. Due to the different clamping levels in forward and reverse direction the VESD05A6A-HAF clamping behavior is bidirectional and asymmetrical (BiAs). L1 L2 L3 6 54 7 1 2 3 L4 L5 L6 19365 If symmetrical clamping behaviour is required the VESD05A6A-HAF can also be used as a bidirectional symmetrical protection device protecting up to 5 lines. In this case pin no. 7 must not be connected. L1 L2 L3 6 54 7 1 2 3 L4 L5 19366 ELECTRICAL CHARACTERISTICS VESD05A6A-HAF (Between pin 1, 2, 3, 4, 5 or 6, and pin 7) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 6 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 0.1 A V 5- - V R R Reverse current at V = 5 V I - < 0.01 0.1 A R R Reverse breakdown voltage at I = 1 mA V 66.7 7.5 V R BR at I = 1 A V -9 10 V PP C Reverse clamping voltage at I = I = 2.5 A V -12 13 V PP PPM C at I = 1 A V -2 2.5 V PP F Forward clamping voltage at I = I = 2.5 A V -3.2 4 V PP PPM F at V = 0 V f = 1 MHz C -13 15 pF R D Capacitance at V = 2.5 V f = 1 MHz C -8- pF R D Rev. 1.6, 07-Jan-2018 Document Number: 81880 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000