V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.38 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 Low thermal resistance 1 1 V40100C VF40100C Solder bath temperature 275 C maximum, 10 s, per JESD PIN 1 PIN 2 PIN 1 PIN 2 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA PIN 3 CASE PIN 3 package) Material categorization: for definitions of compliance 2 D PAK (TO-263AB) TO-262AA please see www.vishay.com/doc 99912 K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters, and reverse battery protection. 1 3 2 VB40100C VI40100C 1 MECHANICAL DATA PIN 1 K PIN 1 PIN 2 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and PIN 2 HEATSINK PIN 3 K TO-262AA click logo to get started Molding compound meets UL 94 V-0 flammability rating DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per Models Available J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 20 A F(AV) Mounting Torque: 10 in-lbs maximum V 100 V RRM I 250 A FSM V at I = 20 A 0.61 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100C VF40100C VB40100C VI40100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 40 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed I 250 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 90 mH per diode E 230 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p I 1.0 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 19-Jun-2018 Document Number: 89042 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT 100 I = 1.0 mA - R (minimum) (2) Breakdown voltage T = 25 C V V A BR 105 I = 10 mA - R (minimum) I = 5 A 0.47 - F I = 10 A T = 25 C 0.54 - F A I = 20 A 0.67 0.73 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.38 - F I = 10 A T = 125 C 0.45 - F A I = 20 A 0.61 0.67 F T = 25 C 9- A A V = 70 V R T = 125 C 10 - mA A (2) Reverse current at rated V per diode I R R T = 25 C - 1000 A A V = 100 V R T = 125 C 21 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100C VF40100C VB40100C VI40100C UNIT Typical thermal resistance per diode R 2.0 4.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40100C-E3/4W 1.85 4W 50/tube Tube ITO-220AB VF40100C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB40100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40100C-E3/8W 1.39 8W 800/tube Tape and reel TO-262AA VI40100C-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 18 50 VI40100C 16 D = 0.8 VB40100C D = 0.5 40 14 V40100C D = 0.3 12 30 VF40100C D = 0.2 D = 1.0 10 8 D = 0.1 20 T 6 4 10 2 D = t /T t p p 0 0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 89042 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)