VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES A 1 8 NC Isolation test voltage, 4000 V RMS 2 K 7 B Lead (Pb)-free component NC 3 6 C Component in accordance to RoHS 2002/95/EC NC 4 5 E and WEEE 2002/96/EC i179002 DESCRIPTION AGENCY APPROVALS The VO211AT, VO212AT, VO213AT are optically coupled UL1577, file no. E52744 system code Y pairs with a gallium arsenide infrared LED and silicon NPN CUL - file no. E52744, equivalent to CSA bulletin 5A phototransistor. Signal information, including a DC level, can DIN EN 60747-5-5 (VDE 0884) available with option 1 be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The VO211AT, VO212AT, VO213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. ORDER INFORMATION PART REMARKS VO211AT CTR > 20 %, SOIC-8 VO212AT CTR > 50 %, SOIC-8 VO213AT CTR > 100 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V 6V R Peak forward current 1 s, 300 pps I 1A FM Forward continuous current I 60 mA F Power dissipation P 90 mW diss Derate linearly from 25 C 1.2 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 7V ECO Collector base breakdown voltage BV 70 V CBO I I 50 mA Cmax. DC Cmax. DC I t < 1 ms I 100 mA Cmax. Cmax. Power dissipation P 150 mW diss Derate linearly from 25 C 2mW/C COUPLER Isolation test voltage V 4000 V ISO RMS Total package dissipation LED and detector P 240 mW tot Derate linearly from 25 C 3.2 mW/C Storage temperature T - 40 to + 150 C stg Operating temperature T - 40 to + 100 C amb Soldering time at 260 C T 10 s sld Note T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Document Number: 81958 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.0, 02-Dec-08 1 VO211AT, VO212AT, VO213AT Optocoupler, Phototransistor Output, with Vishay Semiconductors Base Connection in SOIC-8 Package ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.3 1.5 V F F Reverse current V = 6 V I 0.1 100 A R R Capacitance V = 0 V C 13 pF R O OUTPUT Collector emitter breakdown voltage I = 100 A BV 30 V C CEO Emitter collector breakdown voltage I = 10 A BV7V E ECO Collector base breakdown voltage I = 100 A BV 100 V C CBO Collector base current I 1nA CBO Emitter base current I 1nA EBO Collector dark current V = 10 V I 550 nA CE CEO Collector emitter capacitance V = 0 V C 10 pF CE CE Saturation voltage, collector emitter I = 10 mA V 0.4 V F CEsat COUPLER Isolation test voltage 1 s V 4000 V ISO RMS Note T = 25 C, unless otherwise specified. amb Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VO211AT CTR 20 50 % Current transfer ratio I = 10 mA, V = 5 V VO212AT CTR 50 80 % F CE VO213AT CTR 100 130 % www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 81958 2 Rev. 1.0, 02-Dec-08