VOMA617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, SOP-4, Mini-Flat Package FEATURES AEC-Q101 qualified A 1 4 C High CTR with low input current SOP-4 low profile package C 2 3 E High collector emitter voltage, V = 80 V CEO Isolation test voltage = 3750 V RMS Low coupling capacitance Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The VOMA617A series has a GaAlAs infrared emitting diode, APPLICATIONS which is optically coupled to a silicon planar phototransistor Galvanic and noise isolation detector, and is incorporated in a 4-pin mini-flat package. Signal transmission It features a high current transfer ratio at low input current, Hybrid / electric vehicle applications low coupling capacitance, and high isolation voltage. Battery management The coupling devices are designed for signal transmission between two electrically separated circuits, specifically for 48 V board net use in automotive, as well as high reliable industrial System control applications. AGENCY APPROVALS UL1577 cUL 1577 DIN EN 60747-5-5 (VDE 0884-5) CQC GB4943.1-2011 ORDERING INFORMATION V O M A 6 1 7 A - X 001 T SOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 5 mm BIN AND REEL CTR (%) AGENCY CERTIFIED / PACKAGE 5 mA UL, cUL, VDE, CQC 50 to 600 100 to 200 160 to 320 130 to 260 SOP-4 VOMA617A-X001T VOMA617A-3X001T VOMA617A-4X001T VOMA617A-8X001T Note Additional options may be possible, please contact sales office Rev. 1.1, 03-May-2018 Document Number: 84433 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOMA617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Power dissipation P 30 mW diss Forward current I 20 mA F Surge forward current t 10 s I 0.5 A p FSM Junction temperature T 125 C j OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Total power dissipation P 180 mW tot Storage temperature range T -40 to +150 C stg Ambient temperature range T -40 to +110 C amb Soldering temperature t = 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 25 10000 Coupled device 20 150 1000 1000 15 Phototransistor 100 10 100 100 50 IR diode 5 0 10 0 10 0 255075 100 125 0 255075 100 125 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 1.1, 03-May-2018 Document Number: 84433 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line P - Total Power Dissipation (mW) tot 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line