VS-16F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 16 A FEATURES High surge current capability Stud cathode and stud anode version Wide current range Types up to 1200 V V RRM Designed and qualified for industrial and consumer level Material categorization: for definitions of compliance DO-4 (DO-203AA) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS Battery charges I 16 A F(AV) Converters Package DO-4 (DO-203AA) Power supplies Circuit configuration Single Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 16 A I F(AV) T 140 C C I 25 A F(RMS) 50 Hz 350 I A FSM 60 Hz 370 50 Hz 612 2 2 I t A s 60 Hz 560 V Range 100 to 1200 V RRM T -65 to +175 C J ELECTRICAL SPECIFICATIONS SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM I MAXIMUM RRM TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE AT T = 175 C J NUMBER CODE REVERSE VOLTAGE PEAK VOLTAGE mA V V 10 100 150 20 200 275 40 400 500 VS-16F(R) 60 600 725 12 80 800 950 100 1000 1200 120 1200 1400 Revision: 11-Jan-18 Document Number: 93491 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 16 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 140 C Maximum RMS forward current I 25 A F(RMS) t = 10 ms 350 No voltage reapplied t = 8.3 ms 370 Maximum peak, one-cycle forward, I A FSM non-repetitive surge current t = 10 ms 295 100 % V RRM reapplied t = 8.3 ms 310 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 612 No voltage reapplied t = 8.3 ms 560 2 2 2 Maximum I t for fusing I t A s t = 10 ms 435 100 % V RRM reapplied t = 8.3 ms 395 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 6120 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.77 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.90 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 7.80 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 5.70 f2 F(AV) J J slope resistance Maximum forward voltage drop V I = 50 A, T = 25 C, t = 400 s rectangular wave 1.23 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating T -65 to +175 J temperature range C Maximum storage temperature range T -65 to +200 Stg Maximum thermal resistance, R DC operation 1.6 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.5 thCS case to heat sink 1.5 + 0 - 10 % N m Not lubricated threads (13) (lbf in) Allowable mounting torque 1.2 + 0 - 10 % N m Lubricated threads (10) (lbf in) 7g Approximate weight 0.25 oz. Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.31 0.23 120 0.38 0.40 90 0.49 0.54 T = T maximum K/W J J 60 0.72 0.75 30 1.20 1.21 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93491 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000