VS-201CNQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 200 A FEATURES 175 C T operation J Lug Lug terminal terminal Center tap module anode 1 anode 2 Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability UL approved file E222165 TO-244 Designed and qualified for industrial level Base common cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS The VS-201CNQ045PbF center tap Schottky rectifier I 200 A F(AV) module has been optimized for low reverse leakage at high V 45 V R temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Package TO-244 Typical applications are in high current switching power Circuit configuration Two diodes common cathode supplies, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 200 A F(AV) V 45 V RRM I t = 5 s sine 16 000 A FSM p V 100 A , T = 125 C (per leg) 0.58 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-201CNQ045PbF UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per device 200 forward current I 50 % duty cycle at T = 146 C, rectangular waveform A F(AV) C per leg 100 See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 16 000 non-repetitive surge current per leg I load condition and with A FSM rated V applied 10 ms sine or 6 ms rect. pulse 2000 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 17 A, L = 1 mH 145 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 20 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 09-May-17 Document Number: 94154 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-201CNQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 A 0.67 T = 25 C J 200 A 0.81 Maximum forward voltage drop per leg (1) V V FM See fig. 1 100 A 0.58 T = 125 C J 200 A 0.71 T = 25 C 10 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 90 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 5200 pF T R DC Typical series inductance per leg L From top of terminal hole to mounting plane 7.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T - 55 - 175 C J Stg per leg - - 0.38 Thermal resistance, junction to case R thJC per module - - 0.19 C/W Thermal resistance, case to heatsink R -0.10- thCS 68 g Weight - - 2.4 oz. Mounting torque 35.4 (4) - 53.1 (6) lbf in Mounting torque center hole 30 (3.4) - 40 (4.6) (N m) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 lbf in 2 lever pull - - 35 Revision: 09-May-17 Document Number: 94154 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000