VS-20BQ030-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: For definitions of compliance Package SMB please see www.vishay.com/doc 99912 I 2 A F(AV) DESCRIPTION V 30 V R The VS-20BQ030-M3 surface mount Schottky rectifier has V at I 0.37 V F F been designed for applications requiring low forward drop I 15 mA at 125 C RM and small foot prints on PC boards. Typical applications are T max. 150 C J in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery Diode variation Single die protection. E 3.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 2 A F(AV) V 30 V RRM I t = 5 s sine 350 A FSM p V 2.0 Apk, T = 125 C 0.37 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20BQ030-M3UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 2.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 350 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 75 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 29-May-12 Document Number: 93333 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20BQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 2 A 0.47 T = 25 C J 4 A 0.55 (1) Maximum forward voltage drop V V FM 2 A 0.37 T = 125 C J 4 A 0.47 T = 25 C 0.5 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 15 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and (1) T , T - 55 to 150 C J Stg storage temperature range Maximum thermal resistance, (2) R DC operation 25 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) 2E Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 29-May-12 Document Number: 93333 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000