VS-243NQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 240 A FEATURES Lug terminal 175 C T operation J anode Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base cathode Designed and qualified for industrial level HALF-PAK (D-67) UL approved file E222165 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS I 240 A F(AV) The VS-243NQ.. high current Schottky rectifier module V 100 V series has been optimized for low reverse leakage at high R temperature. The proprietary barrier technology allows Package HALF-PAK (D-67) for reliable operation up to 175 C junction temperature. Circuit configuration Single diode Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse batter y protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 240 A F(AV) V 100 V RRM I t = 5 s sine 25 500 A FSM p V 240 A , T = 125 C 0.72 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-243NQ100PbF UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 132 C, rectangular waveform 240 F(AV) C See fig. 5 A Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 25 500 non-repetitive surge current I load condition and with FSM 10 ms sine or 6 ms rect. pulse 3300 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 5.5 A, L = 1 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Feb-2019 Document Number: 94171 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-243NQ100PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 240 A 0.95 T = 25 C J 480 A 1.26 Maximum forward voltage drop (1) V V FM See fig. 1 240 A 0.72 T = 125 C J 480 A 0.85 T = 25 C 6 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 80 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 5500 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 500 s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T , T -55 to +175 C J Stg DC operation Maximum thermal resistance, junction to case R 0.19 thJC See fig. 4 C/W Typical thermal resistance, case to heatsink R Mounting surface, smooth and greased 0.05 thCS 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 1000 1000 T = 175 C J 100 T = 150 C J T = 125 C J 10 T = 100 C J 1 T = 75 C J T = 175 C J 0.1 T = 125 C J T = 50 C J T = 25 C J 0.01 T = 25 C J 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 020 40 60 80 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94171 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 100 10 1 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R