VS-30EPH03PbF, VS-30EPH03-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Base common Ultrafast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to 2 3 JEDEC -JESD 47 13 Available 1 Material categorization: Cathode Anode for definitions of compliance please see TO-247AC modied www.vishay.com/doc 99912 DESCRIPTION / APPLICATION 300 V series are the state of the art ultrafast recovery PRODUCT SUMMARY rectifiers designed with optimized performance of forward Package TO-247AC modified (2 pins) voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time I 30 A F(AV) control guarantee the best overall performance, ruggedness V 300 V R and reliability characteristics. V at I 0.9 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well as T max. 175 C J freewheeling diodes in low voltage inverters and chopper motor drives. Diode variation Single die Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 300 V RRM Average rectified forward current I T = 143 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 300 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 30 A - 1.08 1.25 F Forward voltage V F I = 30 A, T = 125 C - 0.9 1.00 F J V = V rated - 0.05 60 R R Reverse leakage current I A R T = 125 C, V = V rated - 280 600 J R R Junction capacitance C V = 300 V - 90 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 09-Jul-15 Document Number: 94017 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30EPH03PbF, VS-30EPH03-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 55 F F R Reverse recovery time t T = 25 C -38 - ns rr J T = 125 C - 52 - J I = 30 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 7.3 - J V = 200 V R T = 25 C - 53 - J Reverse recovery charge Q nC rr T = 125 C - 190 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R -0.50.9 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.4 - thCS case to heatsink -6.0 - g Weight -0.22 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC modified 30EPH03 Revision: 09-Jul-15 Document Number: 94017 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000