VS-30EPH06HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base common Hyperfast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Single diode device AEC-Q101 qualified, meets JESD 201 TO-247AC modified 13 class 1A whisker test Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 30 A F(AV) State of the art hyperfast recovery rectifiers designed with V 600 V R optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. V at I 1.34 V F F The planar structure and the platinum doped life time t typ. See Recovery table rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. Package TO-247AC modified These devices are intended for use in PFC boost stage in Circuit configuration Single the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 116 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 300 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.6 F Forward voltage V F I = 30 A, T = 150 C - 1.34 1.75 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 60 500 J R R Junction capacitance C V = 600 V - 33 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 05-Nov-2018 Document Number: 94371 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30EPH06HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 28 35 F F R Reverse recovery time t T = 25 C -31 - ns rr J T = 125 C - 77 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 200 V R T = 25 C - 65 - J Reverse recovery charge Q nC rr T = 125 C - 345 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.50.9 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.4 - thCS case to heatsink and greased -6.0 - g Weight -0.22 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC modified 30EPH06H Revision: 05-Nov-2018 Document Number: 94371 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000