VS-50WQ10FNHM3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 5.5 A
FEATURES
Base
cathode
Low forward voltage drop
4, 2
Guard ring for enhanced ruggedness and
long term reliability
Popular D-PAK outline
1 3
Small foot print, surface mountable
D-PAK (TO-252AA)
Anode Anode
High frequency operation
AEC-Q101 qualified
Meets JESD 201 class 2 whisker test
PRODUCT SUMMARY
Meets MSL level 1, per J-STD-020, LF maximum peak
Package D-PAK (TO-252AA)
of 260 C
I 5.5 A
F(AV)
Material categorization: For definitions of compliance
V 100 V
R
please see www.vishay.com/doc?99912
V at I See Electrical table
F F
DESCRIPTION
I 4 mA at 125 C
RM
The VS-50WQ10FNHM3 surface mount Schottky rectifier
T max. 150 C
J
has been designed for applications requiring low forward
Diode variation Single die
drop and small foot prints on PC board. Typical applications
E 6 mJ
AS are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 5.5 A
F(AV)
V 100 V
RRM
I t = 5 s sine 330 A
FSM p
V 5 A , T = 125 C 0.63 V
F pk J
T Range - 40 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ10FNHM3UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 135 C, rectangular waveform 5.5
F(AV) C
See fig. 5
Maximum peak one cycle Following any rated load A
5 s sine or 3 s rect. pulse 330
non-repetitive surge current I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse 110
See fig. 7 V applied
RRM
Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 40 mH 6.0 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 0.5 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 21-Aug-13 Document Number: 94730
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-50WQ10FNHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
5 A 0.77
T = 25 C
J
10 A 0.91
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
5 A 0.63
T = 125 C
J
10 A 0.74
T = 25 C 1
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 4
J
Threshold voltage V 0.47 V
F(TO)
T =T maximum
J J
Forward slope resistance r 21.46 m
t
Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 183 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH
S
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and storage
(1)
T , T - 40 to 150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
R 3.0 C/W
thJC
junction to case See fig. 4
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK 50WQ10FNH
Note
dP
1
tot
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
Revision: 21-Aug-13 Document Number: 94730
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000