VS-60.PF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES Glass passivated pellet chip junction 150 C max. operating junction temperature 1 Low forward voltage drop and short reverse 1 recovery time 2 33 Available 3 Designed and qualified according to TO-247AC 2L TO-247AC 3L JEDEC -JESD 47 Material categorization: for definitions of compliance Base Base please see www.vishay.com/doc 99912 cathode cathode 2 2 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. 1 3 Anode Anode Anode Cathode 1 3 DESCRIPTION VS-30EPF1... VS-30APF1... The VS-65EPF006-M3and VS-65APF006-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. PRIMARY CHARACTERISTICS The glass passivation ensures stable reliable operation in I 60 A F(AV) the most severe temperature and power cycling conditions. V 200 V, 400 V, 600 V R V at I 1.3 V F F I 830 A FSM t 70 ns rr T max. 150 C J Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single Snap factor 0.5 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 60 F(AV) A I 830 FSM t 1 A, 100 A/s 70 ns rr V 30 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-60EPF02-M3, VS-60APF02-M3 200 300 VS-60EPF04-M3, VS-60APF04-M3 400 500 10 VS-60EPF06-M3, VS-60APF06-M3 600 700 Revision: 29-Nov-2019 Document Number: 93710 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-60.PF0.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 106 C, 180 conduction half sine wave 60 F(AV) C 10 ms sine pulse, rated V applied 700 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 830 10 ms sine pulse, rated V applied 2450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 3460 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 34 600 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 60 A, T = 25 C 1.3 V FM J Forward slope resistance r 5.0 m t T = 150 C J Threshold voltage V 0.88 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 10 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I FM Reverse recovery time t 180 ns rr I at 60 A t F pk rr Reverse recovery current I 25 A/s 3.4 A rr t t a b t 25 C dir Reverse recovery charge Q 0.5 C rr dt Q rr Snap factor S Typical 0.5 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.4 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (Ibf in) maximum 12 (10) 60EPF02 Case style TO-247AC 2L 60EPF04 60EPF06 Marking device 60APF02 Case style TO-247AC 3L 60APF04 60APF06 Revision: 29-Nov-2019 Document Number: 93710 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000