VS-6TQ035-M3, VS-6TQ040-M3, VS-6TQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES 175 C T operation J Base cathode High frequency operation 2 Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode 2L TO-220AC Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 6 A F(AV) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R V at I 0.53 V F F DESCRIPTION I max. 7 mA at 125 C RM The VS-6TQ... Schottky rectifier series has been optimized T max. 175 C for low reverse leakage at high temperature. The proprietary J barrier technology allows for reliable operation up to 175 C E 8 mJ AS junction temperature. Typical applications are in switching Package 2L TO-220AC power supplies, converters, freewheeling diodes, and Circuit configuration Single reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 6A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 690 A FSM p V 6 A , T = 125 C 0.53 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-6TQ035-M3VS-6TQ040-M3 VS-6TQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 164 C, rectangular waveform 6 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 690 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse V applied 140 See fig. 7 RRM Non-repetitive avalanche energy E T = 25 C, I = 1.20 A, L = 11.10 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.20 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96264 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-6TQ035-M3, VS-6TQ040-M3, VS-6TQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 6 A 0.60 T = 25 C J 12 A 0.73 Maximum forward voltage drop (1) V V FM See fig. 1 6 A 0.53 T = 125 C J 12 A 0.64 T = 25 C 0.8 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Threshold voltage V 0.35 V F(TO) T = T maximum J J Forward slope resistance r 18.23 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, DC operation R 2.2 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 6TQ035 Marking device Case style 2L TO-220AC 6TQ040 6TQ045 Revision: 23-Nov-17 Document Number: 96264 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000