VS-85HF(R) 40M8
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
High surge current capability
Stud cathode and stud anode version
Leaded version available
Types up to 1600 V V
RRM
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
Battery chargers
PRIMARY CHARACTERISTICS
Converters
I 85 A
F(AV)
Power supplies
Package DO-5 (DO-203AB)
Machine tool controls
Circuit configuration Single
Welding
MAJOR RATINGS AND CHARACTERISTICS
85HF(R)
PARAMETER TEST CONDITIONS UNITS
400
85 A
I
F(AV)
T 140 C
C
I 133 A
F(RMS)
50 Hz 1700
I A
FSM
60 Hz 1800
50 Hz 14 500
2 2
I t A s
60 Hz 13 500
V 400 V
RRM
T -65 to +180 C
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM
RRM RSM RRM
VOLTAGE
TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM
J J
CODE
V V mA
VS-85HF(R) 40 400 500 9
Revision: 11-Jan-18 Document Number: 93529
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-85HF(R) 40M8
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
85 A
Maximum average forward current
I 180 conduction, half sine wave
F(AV)
at case temperature
140 C
Maximum RMS forward current I 133 A
F(RMS)
t = 10 ms 1700
No voltage
reapplied
t = 8.3 ms 1800
Maximum peak, one-cycle forward,
I A
FSM
non-repetitive surge current
t = 10 ms 1450
100 % V
RRM
reapplied
t = 8.3 ms 1500
Sinusoidal half wave,
initial T = T maximum
t = 10 ms J J 14 500
No voltage
reapplied
t = 8.3 ms 13 500
2 2 2
Maximum I t for fusing I t A s
t = 10 ms 10 500
100 % V
RRM
reapplied
t = 8.3 ms 9400
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A s
Value of threshold voltage
0.68
(up to 1200 V)
V T = T maximum V
F(TO) J J
Value of threshold voltage
0.69
(for 1400 V, 1600 V)
Value of forward slope resistance
1.62
(up to 1200 V)
r T = T maximum mW
f J J
Value of forward slope resistance
1.75
(for 1400 V, 1600 V)
Maximum forward voltage drop V I = 267 A, T = 25 C, t = 400 s rectangular wave 1.2 V
FM pk J p
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
Maximum junction operating and
T , T -65 to +180 C
J Stg
storage temperature range
Maximum thermal resistance, junction to case R DC operation 0.35
thJC
K/W
Maximum thermal resistance, case to heatsink R Mounting surface, smooth, flat and greased 0.25
thCS
Maximum shock 1500
Maximum constant vibration 50 Hz 20 g
Maximum constant acceleration Stud outwards 5000
Not lubricated thread, tighting on nut 3.4 (30)
Lubricated thread, tighting on nut 2.3 (20)
Maximum allowable mounting torque N m
+0 %, -10 % (lbf in)
Not lubricated thread, tighting on hexagon 4.2 (37)
Lubricated thread, tighting on hexagon 3.2 (28)
17 g
Approximate weight Unleaded device
0.6 oz.
Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)
R CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180 0.10 0.08
120 0.11 0.11
90 0.13 0.13 T = T maximum K/W
J J
60 0.17 0.17
30 0.26 0.26
Note
The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC
thJC
Revision: 11-Jan-18 Document Number: 93529
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000