VS-GT180DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A FEATURES 1200 V trench and field stop technology Low switching losses Positive temperature coefficient Easy paralleling Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse SOT-227 recovery T maximum = 150 C J PRIMARY CHARACTERISTICS Fully isolated package V 1200 V Very low internal inductance ( 5 nH typical) CES I 185 A at 90 C Industry standard outline C(DC) V typical at 100 A, 25 C 1.55 V UL approved file E78996 CE(on) Material categorization: for definitions of compliance I 32 A at 90 C F(DC) please see www.vishay.com/doc 99912 Speed 8 kHz to 30 kHz Package SOT-227 BENEFITS Circuit configuration Single switch Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Very low V CE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 1200 V CES T = 25 C 281 C (1) Continuous collector current I C T = 90 C 185 C A Pulsed collector current I 390 CM Clamped inductive load current I 450 LM Gate to emitter voltage V 20 V GE T = 25 C 51 C Diode continuous forward current I F T = 90 C 32 A C Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 185 FSM J T = 25 C 1087 C Power dissipation, IGBT P D T = 90 C 522 C W T = 25 C 216 C Power dissipation, diode P D T = 90 C 103 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Note (1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals Revision: 13-Apr-18 Document Number: 96044 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GT180DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 5.7 mA 1200 - - BR(CES) GE C V = 15 V, I = 100 A - 1.55 2.05 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 1.71 - CE(on) GE C J V V = 15 V, I = 100 A, T = 150 C - 1.76 - GE C J V = V , I = 5.7 mA 4.75 5.8 7.0 CE GE C Gate threshold voltage V GE(th) V = V , I = 5.7 mA, T = 125 C - 4.7 - CE GE C J Temperature coefficient of threshold voltage V / T V = V , I = 5.7 mA (25 C to 125 C) - -11.4 - mV/C GE(th) J CE GE C Transfer characteristics V V = 20 V, I = 100 A - 8.5 - V GE DS D V = 0 V, V = 1200 V - 0.6 100 A GE CE Collector to emitter leakage current I V = 0 V, V = 1200 V, T = 125 C - 0.4 - CES GE CE J mA V = 0 V, V = 1200 V, T = 150 C - 1.6 - GE CE J I = 40 A, V = 0 V - 3.0 3.5 F GE Forward voltage drop, diode V I = 40 A, V = 0 V, T = 125 C - 3.2 - V FM F GE J I = 40 A, V = 0 V, T = 150 C - 3.2 - F GE J Gate to emitter leakage current I V = 20 V - - 220 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Input capacitance C - 9350 - ies V = 25 V, V = 0 V, f = 1 MHz, CE GE pF T = 25 C J Reverse transfer capacitance C - 350 - res Turn-on switching loss E -4.4 - on Turn-off switching loss E -7.3 - mJ off Total switching loss E -11.7 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 1.0 - 192 - d(on) GE g L = 500 H, T = 25 C J Rise time t -59- r ns Turn-off delay time t - 334 - d(off) Energy losses Fall time t - 137 - f include tail and diode Turn-on switching loss E -5.7 - on recovery Turn-off switching loss E -11.6 - mJ off Total switching loss E -17.3 - tot I = 100 A, V = 720 V, C CC Turn-on delay time t V = 15 V, R = 1.0 - 200 - d(on) GE g L = 500 H, T = 125 C J Rise time t -62- r ns Turn-off delay time t - 485 - d(off) Fall time t - 138 - f = 150 C, I = 450 A, R = 1.0 T J C g V = 15 V to 0 V, V = 600 V, Reverse bias safe operating area RBSOA Fullsquare GE CC V = 1200 V, L = 500 H P Diode reverse recovery time t - 163 - ns rr Diode peak reverse current I I = 50 A, dI /dt = 200 A/s, V = 400 V -10.4 - A rr F F R Diode recovery charge Q - 851 - nC rr Diode reverse recovery time t - 225 - ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -14.9 - A rr V = 400 V, T = 125 C R J Diode recovery charge Q - 1698 - nC rr T = 150 C, V = 15 V to 0 V, J GE Short circuit safe operating area SCSOA 10 s V = 800 V, V = 1200 V CC p Revision: 13-Apr-18 Document Number: 96044 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000