VSS8D2M10 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP Series Available Low-profile package Meets MSL level 1, per J-STD-020 , LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Compatible to SOD-128 package case outline Material categorization: for definitions of compliance Top View Bottom View please see www.vishay.com/doc 99912 SlimSMAW (DO-221AD) TYPICAL APPLICATIONS Cathode Anode For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, click logo to get started DESIGN SUPPORT TOOLS and automotive applications. Models MECHANICAL DATA Available Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant I 2 A F(AV) Base P/NHM3 - halogen-free, RoHS-compliant, and V 100 V RRM AEC-Q101 qualified I 50 A FSM Terminals: matte tin plated leads, solderable per V at I = 2 A (T = 125 C) 0.56 V F F A J-STD-002 and JESD 22-B102 T max. 175 C J M3 and HM3 suffix meet JESD 201 class 2 whisker test Package SlimSMAW (DO-221AD) Polarity: color band denotes cathode end Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSS8D2M10 UNIT Device marking code 2M10 Maximum repetitive peak reverse voltage V 100 V RRM (1) Maximum average forward rectified current (fig.1) I 2A F(AV) Peak forward surge current 10 ms single half sine-wave I 50 A FSM superimposed on rated load (2) Operating junction temperature range T -40 to +175 J C Storage temperature range T -55 to +175 STG Notes (1) Free air, mounted on recommended copper pad area (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 21-Jan-2019 Document Number: 87442 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSS8D2M10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1 A 0.56 - F T = 25 C A I = 2 A 0.66 0.74 F (1) Instantaneous forward voltage V V F I = 1 A 0.48 - F T = 125 C A I = 2 A 0.56 0.64 F T = 25 C 0.01 - A (2) V = 70 V I mA R R T = 125 C 0.5 - A Reverse current T = 25 C -0.15 A (2) V = 100 V I mA R R T = 125 C 1 3 A Typical junction capacitance 4.0 V, 1 MHz C 250 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TYP. MAX. UNIT (1)(2) R 120 150 JA Typical thermal resistance C/W (3) R 12 15 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Thermal resistance junction-to-ambient to follow JEDEC 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint (3) Thermal resistance junction-to-mount to follow JEDEC 51-14 transient dual interface test method (TDIM) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSS8D2M10-M3/H 0.033 H 3500 7 diameter plastic tape and reel VSS8D2M10-M3/I 0.033 I 14 000 13 diameter plastic tape and reel (1) VSS8D2M10HM3/H 0.033 H 3500 7 diameter plastic tape and reel (1) VSS8D2M10HM3/I 0.033 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 21-Jan-2019 Document Number: 87442 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000