X-On Electronics has gained recognition as a prominent supplier of VS-ST183C08CFN0 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-ST183C08CFN0 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-ST183C08CFN0 Vishay

VS-ST183C08CFN0 electronic component of Vishay
VS-ST183C08CFN0 Vishay
VS-ST183C08CFN0 SCRs
VS-ST183C08CFN0  Semiconductors

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See Product Specifications
Part No. VS-ST183C08CFN0
Manufacturer: Vishay
Category: SCRs
Description: SCRs 800 Volt 370 Amp
Datasheet: VS-ST183C08CFN0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 12
Multiples : 1
12 : USD 83.8
25 : USD 83.3
50 : USD 82.8
100 : USD 82.3
250 : USD 81.7875
500 : USD 81.275
1000 : USD 80.75
2500 : USD 80.2375
5000 : USD 79.7
10000 : USD 79.175
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 112.2781
5 : USD 103.9074
10 : USD 96.7192
50 : USD 90.1385
100 : USD 77.7457
N/A

Obsolete
0
MOQ : 12
Multiples : 12
12 : USD 85.0012
24 : USD 82.7606
108 : USD 81.7635
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Breakover Current IBO Max
Minimum Operating Temperature
Maximum Operating Temperature
Current Rating
Off-State Leakage Current Vdrm Idrm
On-State Voltage
Brand
Circuit Type
Non Repetitive On-State Current
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-ST183C08CFN0 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-ST183C08CFN0 and other electronic components in the SCRs category and beyond.

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VS-ST183C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES Metal case with ceramic insulator All diffused design Center amplifying gate International standard case A-PUK (TO-200AB) Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance A-PUK (TO-200AB) High speed performance Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS Package A-PUK (TO-200AB) TYPICAL APPLICATIONS Circuit configuration Single SCR Inverters I 370 A T(AV) Choppers V /V 400 V, 800 V DRM RRM Induction heating V 1.80 V TM All types of force-commutated converters I at 50 Hz 4900 A TSM I at 60 Hz 5130 A TSM I 200 mA GT T /T 55 C C hs MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 370 A I T(AV) T 55 C hs 690 A I T(RMS) T 25 C hs 50 Hz 4900 I A TSM 60 Hz 5130 50 Hz 120 2 2 I t kA s 60 Hz 110 V /V 400 to 800 V DRM RRM t Range 10 to 20 s q T -40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM I /I MAXIMUM DRM RRM RSM DRM RRM VOLTAGE TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM J J CODE V V mA 04 400 500 VS-ST183C..C 40 08 800 900 Revision: 28-Aug-17 Document Number: 94368 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST183C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY I TM I I TM TM FREQUENCY UNITS 180 el 180 el 100 s 50 Hz 770 660 1220 1160 5450 4960 400 Hz 730 600 1270 1090 2760 2420 A 1000 Hz 600 490 1210 1040 1600 1370 2500 Hz 350 270 860 730 800 680 Recovery voltage V 50 50 50 r V Voltage before turn-on V V V V d DRM DRM DRM Rise of on-state current dI/dt 50 - - A/s Heatsink temperature 40554055 4055 C Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 F ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 370 (130) A Maximum average on-state current 180 conduction, half sine wave I T(AV) at heatsink temperature double side (single side) cooled 55 (85) C Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 690 T(RMS) t = 10 ms 4900 No voltage reapplied t = 8.3 ms 5130 A Maximum peak, one half cycle, I TSM non-repetitive surge current t = 10 ms 4120 100 % V RRM reapplied t = 8.3 ms 4310 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 120 No voltage reapplied t = 8.3 ms 110 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 85 100 % V RRM reapplied t = 8.3 ms 78 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1200 kA s I = 600 A, T = T maximum, TM J J Maximum peak on-state voltage V 1.80 TM t = 10 ms sine wave pulse p V Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.40 T(TO)1 T(AV) T(AV) J J High level value of threshold voltage V (I > x I ), T = T maximum 1.45 T(TO)2 T(AV) J J Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.67 t1 T(AV) T(AV) J J m High level value of forward slope r (I > x I ), T = T maximum 0.58 t2 T(AV) J J resistance Maximum holding current I T = 25 C, I > 30 A 600 H J T mA Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000 L J A a G SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of rise T = T maximum, V = Rated V J J DRM DRM dI/dt 1000 A/s of turned on current I = 2 x dI/dt TM T = 25 C, V = Rated V , I = 50 A DC, t = 1 s J DM DRM TM p Typical delay time t 1.1 d Resistive load, gate pulse: 10 V, 5 source s minimum T = T maximum, 10 J J Maximum turn-off time t I = 300 A, commutating dI/dt = 20 A/s q TM maximum 20 V = 50 V, t = 500 s, dV/dt: See table in device code R p Revision: 28-Aug-17 Document Number: 94368 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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DRALORIC / VISHAY
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