VS-UFL130FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T max. = 175 C) J Low forward voltage drop Optimized for power conversion: welding and industrial SMPS applications Easy to use and parallel Industry standard outline SOT-227 UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS The VS-UFL130FA60 insulated modules integrate two state PRIMARY CHARACTERISTICS of the art ultrafast recovery rectifiers in the compact, V 600 V R industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery I per module at T = 98 C 130 A F(AV) C current shape, together with the best overall performance, t 42 ns rr ruggedness and reliability characteristics. Type Modules - diode FRED Pt These devices are thus intended for high frequency Package SOT-227 applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) an d EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current per diode I T = 85 C 87 F C A Single pulse forward current per diode I T = 25 C 800 FSM C Maximum power dissipation per module P T = 85 C 246 W D C RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 10-Sep-2019 Document Number: 93658 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-UFL130FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 100 A 600 - - BR R I = 60 A - 1.29 1.60 F I = 60 A, T = 125 C - 1.13 1.35 V F J Forward voltage V FM = 120 A - 1.49 1.88 I F I = 120 A, T = 125 C - 1.37 1.68 F J V = V rated - 0.1 50 A R R Reverse leakage current I RM T = 175 C, V = V rated - 0.20 1 mA J R R Junction capacitance C V = 600 V - 43 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 42 - F F R Reverse recovery time t T = 25 C - 105 - ns rr J T = 125 C - 200 - J I = 50 A F T = 25 C - 9 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 19 - J V = 200 V R T = 25 C - 440 - J Reverse recovery charge Q nC rr T = 125 C - 1850 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Junction to case, single leg conducting - - 0.73 R thJC Junction to case, both leg conducting - - 0.365 C/W Case to heatsink R Flat, greased surface - 0.10 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 93658 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000