VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) FEATURES High voltage Electrically isolated by DBC ceramic (AI O ) 2 3 3500 V isolating voltage RMS Industrial standard package High surge capability Glass passivated chips Modules uses high voltage power thyristor/diodes in three basic configurations Simple mounting UL approved file E78996 New INT-A-PAK Designed and qualified for multiple level Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 I 135 A to 160 A T(AV) APPLICATIONS Type Modules - Thyristor, Standard DC motor control and drives Package INT-A-PAK Battery charges Two SCRs doubler circuit, SCR/diode doubler circuit, positive control, Welders Circuit SCR/diode doubler circuit, negative Power converters control Lighting control Heat and temperature control MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS I 85 C 135 140 160 A T(AV) I 300 310 355 T(RMS) 50 Hz 3200 4500 4870 A I TSM 60 Hz 3360 4712 5100 50 Hz 51.5 102 119 2 2 I t kA s 60 Hz 47 92.5 108 2 2 I t 515.5 1013 1190 kA s V Range 400 to 1600 400 to 1600 400 to 1600 V RRM T Range -40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V /V , MAXIMUM NON-REPETITIVE I /I RRM DRM RSM DSM RRM DRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 125 C NUMBER CODE V V mA 04 400 500 08 800 900 VS-VSK.136 VS-VSK.142 12 1200 1300 50 VS-VSK.162 14 1400 1500 16 1600 1700 Revision: 11-Apr-14 Document Number: 94513 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS 135 140 160 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 85 85 85 C Maximum RMS on-state current I As AC switch 300 310 355 T(RMS) t = 10 ms 3200 4500 4870 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 3360 4712 5100 A on-state, non-repetitive I TSM t = 10 ms 2700 3785 4100 100 % V RRM surge current Sine half wave, reapplied t = 8.3 ms 2800 3963 4300 initial T = J t = 10 ms 51.5 102 119 No voltage T maximum J reapplied t = 8.3 ms 47 92.5 108 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 36.5 71.6 84 100 % V RRM reapplied t = 8.3 ms 33.3 65.4 76.7 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T maximum 0.86 0.83 0.8 T(TO)1 T(AV) T(AV) J V High level value of threshold voltage V (I > x I ), T maximum 1.05 1 0.98 T(TO)2 T(AV) J Low level value on-state r (16.7 % x x I < I < x I ), T maximum 2.02 1.78 1.67 t1 T(AV) T(AV) J slope resistance m High level value on-state r (I > x I ), T maximum 1.65 1.43 1.38 t2 T(AV) J slope resistance Maximum on-state voltage drop V I = x I , T = 25 C, 180 conduction 1.57 1.55 1.54 V TM TM T(AV) J Maximum forward voltage drop V I = x I , T = 25 C, 180 conduction 1.57 1.55 1.54 V FM TM T(AV) J Maximum holding current I Anode supply = 6 V initial I = 30 A, T = 25 C 200 H T J mA Anode supply = 6 V resistive load = 1 Maximum latching current I 400 L Gate pulse: 10 V, 100 s, T = 25 C J SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical delay time t 1 gd Gate current = 1 A, dl /dt = 1 A/s g T = 25 C J V = 0.67 % V Typical rise time t d DRM 2 gr s I = 300 A, - dl/dt = 15 A/s T = T maximum TM J J Typical turn-off time t 50 to 200 q V = 50 V dV/dt = 20 V/s gate 0 V, 100 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse and I , RRM T = 125 C 50 mA J off-state leakage current I DRM 50 Hz, circuit to base, RMS insulation voltage V 3500 V INS all terminals shorted, t = 1 s Critical rate of rise of T = T maximum, J J dV/dt 1000 V/s off-state voltage exponential to 67 % rated V DRM Revision: 11-Apr-14 Document Number: 94513 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000