Datenblatt / Data sheet Netz-Thyristor-Modul TZ425N Phase Control Thyristor Module Key Parameters Kenndaten VDRM / VRRM 1200V - 1800V Elektrische Eigenschaften I 425A (T =85C) TAVM C I 14500A TSM VT0 0,9V rT 0,3m R 0,078K/W thJC Base plate 50mm For type designation please refer to actual short form catalog Datenblatt / Data sheet Netz-Thyristor-Modul TZ425N Phase Control Thyristor Module TZ425N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1) 1600 1800 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 1800 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 800 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 425 A Dauergrenzstrom T = 85C I C TAVM 510 A average on-state current T = 74C C 14500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 12500 A surge current T = T , t = 10 ms vj vj max P 1051000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 781000 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 120 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,50 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage 0,9 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,3 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 6 V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 6 V V 1,5 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 6 V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 1500 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 80 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25 C,i = 1 A, di /dt = 1 A/s vj GM G 1) 1800 auf Anfrage/ 1800V on request prepared by: A.G. date of publication: 2018-04-17 approved by: M.S. revision: 3.3 Revision 3.3 Seite/page 2/14 Date of Publication 2018-04-17