X-On Electronics has gained recognition as a prominent supplier of VS-VSKT230-08PBF SCR Modules across the USA, India, Europe, Australia, and various other global locations. VS-VSKT230-08PBF SCR Modules are a product manufactured by Vishay. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

VS-VSKT230-08PBF Vishay

VS-VSKT230-08PBF electronic component of Vishay
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Part No.VS-VSKT230-08PBF
Manufacturer: Vishay
Category: SCR Modules
Description: SCR Modules 800volt 230amp
Datasheet: VS-VSKT230-08PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 189.575 ea
Line Total: USD 189.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 189.575

   
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RoHS - XON
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On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Breakover Current Ibo Max
Current Rating
Off-State Leakage Current Vdrm Idrm
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Cnhts
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Mxhts
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We are delighted to provide the VS-VSKT230-08PBF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-VSKT230-08PBF and other electronic components in the SCR Modules category and beyond.

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VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A FEATURES High voltage Electrically isolated base plate 3500 V isolating voltage RMS Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 MAGN-A-PAK Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS This VSK series of MAGN-A-PAK modules uses high voltage I 230 A T(AV) power thyristor/thyristor and thyristor/diode in seven basic Type Modules - thyristor, standard configurations. The semiconductors are electrically isolated Package MAGN-A-PAK from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 85 C 230 T(AV) I 510 T(RMS) A 50 Hz 7500 I TSM 60 Hz 7850 50 Hz 280 2 2 I t kA s 60 Hz 260 2 2 I t 280 kA s V /V 800 to 2000 V DRM RRM T Range -40 to +130 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V , MAXIMUM I /I RRM DRM RSM RRM DRM VOLTAGE PEAK REVERSE AND OFF-STATE NON-REPETITIVE PEAK AT 130 C TYPE NUMBER CODE BLOCKING VOLTAGE REVERSE VOLTAGE MAXIMUM V V mA 08 800 900 12 1200 1300 VS-VSK.230- 16 1600 1700 50 18 1800 1900 20 2000 2100 Revision: 12-Nov-2018 Document Number: 93053 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 230 A Maximum average on-state current I T(AV) 180 conduction, half sine wave at case temperature 85 C Maximum RMS on-state current I As AC switch 510 T(RMS) t = 10 ms 7500 No voltage reapplied t = 8.3 ms 7850 A Maximum peak, one-cycle on-state I TSM non-repetitive, surge current t = 10 ms 6300 100 % V RRM Sinusoidal reapplied t = 8.3 ms 6600 half wave, initial t = 10 ms 280 No voltage T = T maximum J J reapplied t = 8.3 ms 256 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 198 100 % V RRM reapplied t = 8.3 ms 181 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2800 kA s Low level value or threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.03 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.07 T(TO)2 T(AV) J J Low level value on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.77 t1 T(AV) T(AV) J J m High level value on-state slope resistance r (I > x I ), T = T maximum 0.73 t2 T(AV) J J I = x I , T = T maximum, 180 conduction, TM T(AV) J J Maximum on-state voltage drop V 1.59 V TM 2 average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) Maximum holding current I Anode supply = 12 V, initial I = 30 A, T = 25 C 500 H T J mA Anode supply = 12 V, resistive load = 1 , Maximum latching current I 1000 L gate pulse: 10 V, 100 s, T = 25 C J SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical delay time t 1.0 d T = 25 C, gate current = 1 A dI /dt = 1 A/s, J g V = 0.67 % V Typical rise time t d DRM 2.0 r s I = 300 A dI/dt = 15 A/s T = T maximum TM J J Typical turn-off time t 50 to 150 q V = 50 V dV/dt = 20 V/s gate 0 V, 100 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse and I RRM, T = T maximum 50 mA J J off-state leakage current I DRM RMS insulation voltage V 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s 3000 V INS Critical rate of rise of off-state voltage dV/dt T = T maximum, exponential to 67 % rated V 1000 V/s J J DRM TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P t 5 ms, T = T maximum 10.0 GM p J J W Maximum average gate power P f = 50 Hz, T = T maximum 2.0 G(AV) J J Maximum peak gate current + I t 5 ms, T = T maximum 3.0 A GM p J J Maximum peak negative gate voltage - V t 5 ms, T = T maximum 5.0 GT p J J T = -40 C 4.0 J V Anode supply = 12 V, Maximum required DC gate voltage to trigger V T = 25 C 3.0 GT J resistive load Ra = 1 T = T maximum 2.0 J J T = - 40 C 350 J Anode supply = 12 V, Maximum required DC gate current to trigger I T = 25 C 200 mA GT J resistive load Ra = 1 T = T maximum 100 J J Maximum gate voltage that will not trigger V T = T maximum, rated V applied 0.25 V GD J J DRM Maximum gate current that will not trigger I T = T maximum, rated V applied 10.0 mA GD J J DRM Maximum rate of rise of turned-on current dI/dt T = T maximum, I = 400 A, rated V applied 500 A/s J J TM DRM Revision: 12-Nov-2018 Document Number: 93053 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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