VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A FEATURES High voltage Electrically isolated base plate 3600 V isolating voltage RMS Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level MAGN-A-PAK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION This VSK series of MAGN-A-PAK modules uses high voltage PRIMARY CHARACTERISTICS power thyristor/thyristor in doubler circuit configuration. I 320 A T(AV) The semiconductors are electrically isolated from the metal Type Modules - thyristor, standard base, allowing common heatsinks and compact assemblies Package MAGN-A-PAK to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 70 C 320 T(AV) I 710 T(RMS) A 50 Hz 9000 I TSM 60 Hz 9420 50 Hz 405 2 2 I t kA s 60 Hz 370 2 2 I t 4050 kA s V /V 1200 to 1600 V DRM RRM T Range -40 to +130 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V , MAXIMUM I /I RRM DRM RSM RRM DRM VOLTAGE PEAK REVERSE AND OFF-STATE NON-REPETITIVE PEAK AT 130 C TYPE NUMBER CODE BLOCKING VOLTAGE REVERSE VOLTAGE MAXIMUM V V mA 12 1200 1300 VS-VSKT320- 50 16 1600 1700 Revision: 26-Jul-2018 Document Number: 94085 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKT320PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 320 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 70 C Maximum RMS on-state current I As AC switch 710 T(RMS) t = 10 ms 9000 No voltage reapplied t = 8.3 ms 9420 A Maximum peak, one-cycle on-state I TSM non-repetitive, surge current t = 10 ms 7570 100 % V RRM Sinusoidal reapplied t = 8.3 ms 7920 half wave, initial T = J t = 10 ms 405 No voltage T maximum J reapplied t = 8.3 ms 370 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 287 100 % V RRM reapplied t = 8.3 ms 262 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4050 kA s (16.7 % x x I < I < x I ), T(AV) T(AV) Low level value or threshold voltage V 0.80 T(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.03 T(TO)2 T(AV) J J (16.7 % x x I < I < x I ), T(AV) T(AV) Low level value on-state slope resistance r 0.75 t1 T = T maximum J J m High level value on-state slope r (I > x I ), T = T maximum 0.53 t2 T(AV) J J resistance I = 750 A, T = 25 C, 180 conduction, TM J 1.40 2 average power = V x I + r x (I ) T(TO) T(AV) t T(RMS) Maximum peak on-state or V V V TM, FM, forward voltage drop I = 750 A, T = T maximum, 180 conduction, TM J J 1.37 2 average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) Maximum holding current I Anode supply = 12 V, initial I = 30 A, T = 25 C 500 H T J mA Anode supply = 12 V, resistive load = 1 , Maximum latching current I 1000 L gate pulse: 10 V, 100 s, T = 25 C J SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical delay time t 1.0 d T = 25 C, gate current = 1 A dI /dt = 1 A/s J g V = 0.67 % V d DRM Typical rise time t 2.0 r s I = 300 A dI/dt = 15 A/s T = T maximum TM J J Typical turn-off time range t 200 to 350 q V = 50 V dV/dt = 20 V/s gate 0 V, 100 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse and I RRM, T = T maximum 50 mA J J off-state leakage current I DRM RMS insulation voltage V 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s 3600 V INS Critical rate of rise of off-state voltage dV/dt T = T maximum, exponential to 67 % rated V 1000 V/s J J DRM Revision: 26-Jul-2018 Document Number: 94085 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000