VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.49 V at I = 3 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB ITO-220AB Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, 3 3 per JESD 22-B106 (for TO-220AB, ITO-220AB, 2 2 1 and TO-262AA package) 1 VT1080C VFT1080C Material categorization: for definitions of compliance PIN 1 PIN 2 PIN 1 PIN 2 please see www.vishay.com/doc 99912 PIN 3 CASE PIN 3 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC K K converters and reverse battery protection. MECHANICAL DATA 2 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA 1 3 2 Molding compound meets UL 94 V-0 flammability rating 1 VBT1080C VIT1080C Base P/N-E3 - RoHS-compliant, commercial grade PIN 1 K PIN 1 PIN 2 Terminals: matte tin plated leads, solderable per PIN 2 HEATSINK K PIN 3 J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 5 A F(AV) Mounting Torque: 10 in-lbs maximum V 80 V RRM I 80 A FSM V at I = 5 A 0.57 V F F T max. 150 C J TO-220AB, ITO-220AB, Package TO-263AB, TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1080C VFT1080C VBT1080C VIT1080C UNIT Maximum repetitive peak reverse voltage V 80 V RRM per device 10 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5 Peak forward surge current 8.3 ms single half I 80 A FSM sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH J E 30 mJ AS per diode Peak repetitive reverse current at t = 2 s, 1 kHz, p 1.0 A I RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89164 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 80 (minimum) - V R A BR I = 3 A 0.54 - F T = 25 C A I = 5 A 0.63 0.72 Instantaneous forward voltage F (1) V V F per diode I = 3 A 0.49 - F T = 125 C A I = 5 A 0.57 0.66 F T = 25 C 12 400 A A (2) Reverse current per diode V = 80 V I R R T = 125 C 6 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1080CVFT1080CVBT1080CVIT1080CUNIT per diode 3.5 6.5 3.5 3.5 Typical thermal resistance R C/W JC per device 2.5 5.5 2.5 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1080C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT1080C-E3/4W 1.70 4W 50/tube Tube TO-263AB VBT1080C-E3/4W 1.35 4W 50/tube Tube TO-263AB VBT1080C-E3/8W 1.35 8W 800/reel Tape and reel TO-262AA VIT1080C-E3/4W 1.43 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89164 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000