X-On Electronics has gained recognition as a prominent supplier of DD170N16S Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD170N16S Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD170N16S Infineon

DD170N16S electronic component of Infineon
DD170N16S Infineon
DD170N16S Discrete Semiconductor Modules
DD170N16S  Semiconductors

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See Product Specifications
Part No. DD170N16S
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 34 mm Solder Bond Rectifier Diode
Datasheet: DD170N16S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 51.964 ea
Line Total: USD 51.96 
Availability - 19
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 51.964
10 : USD 42.867
20 : USD 42.812
50 : USD 42.79
100 : USD 42.768
200 : USD 42.746
500 : USD 42.68
1000 : USD 42.647
2000 : USD 42.603

   
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DD170N16S from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD170N16S and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Netz-Dioden-Modul DD170N16S Rectifier Diode Module Key Parameters V / V 1600 V DRM RRM I 170 A (T =100 C) FAVM C I 6600 A FSM 3570A (T =55C) C V 0,75 V T0 r 1,05 m T R 0,18 K/W thJC Base plate 34 mm Weight 165 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Dioden-Modul DD170N16S Rectifier Diode Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM repetitive peak reverse voltages 1700 V Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 260 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 165 A Dauergrenzstrom T = 100C I C FAVM average on-state current 6600 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 5500 A surge current T = T , t = 10ms vj vj max P 217800 As Grenzlastintegral T = 25C, t = 10ms It vj P 151250 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values 1,4 V Durchlaspannung T = 25C i = 500A v max. vj F F on-state voltage max. 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 1 , 05 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 9 mA vj vj max R RRM R reverse current RMS, f = 50Hz, t = 1 sec V kV Isolations-Prfspannung ISOL 3,6 RMS, f = 50Hz, t = 1 min kV 3 insulation test voltage Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,09 K/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,18 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,09 K/W pro Zweig / per arm, DC max. 0,18 K/W pro Modul / per Module max. 0,05 K/W bergangs-Wrmewiderstand R thCH max. 0,10 K/W pro Zweig / per arm thermal resistance, case to heatsink 135 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T - 40...+125 C stg Lagertemperatur storage temperature AG date of publication: 2016-02-02 prepared by: revision: 3.2 approved by: MS Date of Publication 2016-02-02 Revision 3.2 Seite/page: 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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