VT60L45PW
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.24 V at I = 5 A
F F
FEATURES
Trench MOS Schottky technology
TMBS
Low forward voltage drop, low power losses
High efficiency operation
Solder dip 275 C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-3PW
For use in high frequency converters, switching power
PIN 1
PIN 2
supplies, freewheeling diodes, OR-ing diode, DC/DC
CASE
PIN 3
converters and reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-3PW
I 2 x 30 A
F(AV)
Molding compound meets UL 94 V-0 flammability rating
V 45 V
Base P/N-M3 - halogen-free, RoHS-compliant, and
RRM
commercial grade
I 400 A
FSM
Terminals: Matte tin plated leads, solderable per
at I = 30 A (T = 125 C) 0.41 V
V
F F A
J-STD-002 and JESD 22-B102
T max. 150 C
J
M3 suffix meets JESD 201 class 1A whisker test
Package TO-3PW
Polarity: As marked
Diode variations Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL VT60L45PW UNIT
Maximum repetitive peak reverse voltage V 45 V
RRM
per device 60
Maximum average forward rectified current (fig. 1) I A
F(AV)
per diode 30
Peak forward surge current 8.3 ms single half sine-wave
I 400 A
FSM
superimposed on rated load per diode
Operating junction and storage temperature range T , T -40 to +150 C
J STG
Revision: 08-Jan-14 Document Number: 87778
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VT60L45PW
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 5 A 0.37 -
F
I = 15 A T = 25 C 0.43 -
F A
I = 30 A 0.49 0.57
F
(1)
Instantaneous forward voltage per diode V V
F
I = 5 A 0.24 -
F
I = 15 A T = 125 C 0.32 -
F A
I = 30 A 0.41 0.50
F
T = 25 C -7 mA
A
(2)
Reverse current per diode V = 45 V I
R R
T = 125 C 67 180 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL VT60L45PW UNIT
per diode 0.9
R
JC
Typical thermal resistance per device 0.6 C/W
(1)(2)
per device R 48
JA
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D J JA
(2)
Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW VT60L45PW-M3/4W 4.5 4W 30/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
70 16
D = 0.8
D = 0.5
Rth = Rth = 0.6 C/W
JA JC
14
60 D = 0.3
D = 0.2
12
50
D = 1.0
D = 0.1
10
40
8
30
6
T
20
4
Rth = 48 C/W
JA
10
2
D = t /T t
p p
0 0
0 255075 100 125 150
0 4 8 12 1620 242832 36
Case Temperature (C) Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 08-Jan-14 Document Number: 87778
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Rectified Current (A)
Average Power Loss (W)