X-On Electronics has gained recognition as a prominent supplier of WM02P41M MOSFET across the USA, India, Europe, Australia, and various other global locations. WM02P41M MOSFET are a product manufactured by Wayon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

WM02P41M Wayon

WM02P41M electronic component of Wayon
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See Product Specifications
Part No.WM02P41M
Manufacturer: Wayon
Category: MOSFET
Description: SOT-23 MOSFETs ROHS
Datasheet: WM02P41M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0551 ea
Line Total: USD 0.55

Availability - 1348
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1328
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0551
100 : USD 0.0444
300 : USD 0.039
3000 : USD 0.0333
6000 : USD 0.0301
9000 : USD 0.0285

   
Manufacturer
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Package
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We are delighted to provide the WM02P41M from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WM02P41M and other electronic components in the MOSFET category and beyond.

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The WM02P41M is a MOSFET manufactured by Wayon and is packaged in a SOT-23 outline. It is a P-channel, enhancement-mode MOSFET that is designed for applications requiring low gate charge and low on-state resistance. It features a maximum drain to source voltage of -20V, a maximum drain current of -2A, and a maximum gate threshold voltage of -2V. The device is compliant with ROHS (Restriction of Hazardous Substances) and is suitable for switching and linear applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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