IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors ACT108W-600E AC Thyristor power switch Rev. 5 13 July 2010 Product data sheet 1. Product profile 1.1 General description AC Thyristor power switch in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients 1.2 Features and benefits Common terminal on mounting base Safe clamping of low energy allows multiple ACTs on shared over-voltage transients cooling pad Self-protective turn-on during high Exclusive negative gate triggering energy voltage transients Full cycle AC conduction Surface-mountable package Remote gate separates the gate driver Very high noise immunity from the effects of the load current 1.3 Applications Contactors, circuit breakers, valves, Lower-power highly inductive, resistive dispensers and door locks and safety loads Fan motor circuits Pump motor circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --600V DRM off-state voltage I gate trigger V =12 V I = 100 mA 1- 10 mA GT D T current LD+ G- T =25C j see Figure 10 V =12 V I = 100 mA 1- 10 mA D T LD- G- T =25C j I RMS on-state full sine wave T 112 C --0.8 A T(RMS) sp current see Figure 4 see Figure 1 see Figure 2 dV /dt rate of rise of V =402 V T = 125 C gate 1000 - - V/s D DM j off-state voltage open circuit see Figure 14