ACTT4S-800E,118 WeEn Semiconductor

ACTT4S-800E AC Thyristor Triac power switch 14 August 2017 Product data sheet 1. General description Planar passivated AC Thyristor Triac power switch in a SOT428 (DPAK) surface mountable plastic package with self-protective clamping capabilities against low and high energy transients. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Sensitive gate for easy logic level triggering Surface mountable package Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 108 C Fig. 1 - - 4 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 35 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 39 A j(init) t = 16.7 ms p T junction temperature - - 125 C j V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6WeEn Semiconductors ACTT4S-800E AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 10 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 10 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 10 mA D T T = 25 C Fig. 8 j I holding current V = 12 V T = 25 C Fig. 10 - - 20 mA H D j V on-state voltage I = 6 A T = 25 C Fig. 11 - - 1.7 V T T j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 13 dI /dt rate of change of V = 400 V T = 125 C I = 4 A 4 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit Fig. 14 Fig. 15 V = 400 V T = 125 C I = 4 A 5 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com Fig. 14 Fig. 15 V = 400 V T = 125 C I = 4 A 8 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 CM common LD 2 LD load G 3 G gate CM mb LD mounting base load 003aaf296 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACTT4S-800E DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) ACTT4S-800E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 2 / 13