ACTT4X-800C/DGQ WeEn Semiconductor

ACTT4X-800C AC Thyristor Triac power switch Rev.02 - 06 September 2019 Product data sheet 1. General description Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F)full pac plastic package with self-protective capabilities against low and high energy transients. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Isolated mounting base package Less sensitive gate for high noise immunity Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Safe clamping capability for low energy over-voltage transients Self-protective turn-on during high energy voltage transients Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 94 C Fig. 1 - - 4 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 35 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 39 A j(init) t = 16.7 ms p T junction temperature - - 125 C j V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6WeEn Semiconductors ACTT4X-800C AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 35 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 35 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 35 mA D T T = 25 C Fig. 8 j I holding current V = 12 V T = 25 C Fig. 10 - - 35 mA H D j V on-state voltage I = 6 A T = 25 C Fig. 11 - - 1.7 V T T j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 13 dI /dt rate of change of V = 400 V T = 125 C I = 4 A 8 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit Fig. 14 Fig. 15 V = 400 V T = 125 C I = 4 A 10 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com Fig. 15 Fig. 16 V = 400 V T = 125 C I = 4 A 15 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 CM common mb LD 2 LD load G 3 G gate CM mb n.c. mounting base isolated 003aaf296 1 2 3 TO-220F (SOT186A) ACTT4X-800C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 06 September 2019 2 / 14