X-On Electronics has gained recognition as a prominent supplier of BT300S-600R,118 SCRs across the USA, India, Europe, Australia, and various other global locations. BT300S-600R,118 SCRs are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

BT300S-600R,118 WeEn Semiconductor

BT300S-600R,118 electronic component of WeEn Semiconductor
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Part No.BT300S-600R,118
Manufacturer: WeEn Semiconductor
Category: SCRs
Description: BT300S-600R/DPAK/REEL 13" Q1/T
Datasheet: BT300S-600R,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
171: USD 0.3295 ea
Line Total: USD 56.34 
Availability - 165
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 171  Multiples: 1
Pack Size: 1
Availability Price Quantity
165
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 171
Multiples : 1
171 : USD 0.3295

   
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We are delighted to provide the BT300S-600R,118 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT300S-600R,118 and other electronic components in the SCRs category and beyond.

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DISCRETE SEMICONDUCTORS DDATA SHEET BT300S series Thyristors Product specification September 1997 Semiconductors Product specification Thyristors BT300S series BT300M series GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, suitable for surface mounting, intended for use in BT300S (or BT300M)- 500R 600R 800R applications requiring high V , Repetitive peak off-state 500 600 800 V DRM bidirectional blocking voltage V voltages RRM capability and high thermal cycling I Average on-state current 5 5 5 A T(AV) performance. Typical applications I RMS on-state current 8 8 8 A T(RMS) include motor control, industrial and I Non-repetitive peak on-state 65 65 65 A TSM domestic lighting, heating and static current switching. PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN Standard Alternative tab NUMBER S M ak 1 cathode gate 2 anode anode 3 gate cathode 2 g 1 3 tab anode anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -600R -800R 1 1 V , V Repetitive peak off-state - 500 600 800 V DRM RRM voltages I Average on-state current half sine wave T 107 C - 5 A T(AV) mb I RMS on-state current all conduction angles - 8 A T(RMS) I Non-repetitive peak half sine wave T = 25 C prior to TSM j on-state current surge t = 10 ms - 65 A t = 8.3 ms - 71 A 2 2 2 ItI t for fusing t = 10 ms - 21 A s dI /dt Repetitive rate of rise of I = 10 A I = 50 mA - 50 A/s T TM G on-state current after dI /dt = 50 mA/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM V Peak reverse gate voltage - 5 V RGM P Peak gate power - 5 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.100

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors
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