BTA16-600BQ WeEn Semiconductor

BTA16-600B 4Q Triac Rev.01 - 14 June 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package intended for use in general purpose bidirectional switching and phase control applications. 2. Features and benefits High voltage capability Least sensitive gate for highest noise immunity High junction operating temperature capability (T = 150 C) j(max) High minimum I for guaranteed immunity to gate noise GT Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Internally insulated package Isolated mounting base with 2500 V (RMS) isolation 3. Applications Applications subject to high temperature (T = 150 C) j(max) Compressor starting control circuits General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak off-state 600 V DRM voltage I RMS on-state current full sine wave T 112 C 16 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave t = 20 ms T = 25 C 160 A TSM p j(init) state current Fig. 4 Fig. 5 full sine wave t = 16.7 ms T = 25 C 176 A p j(init) T junction temperature 150 C jWeEn Semiconductors BTA16-600B 4Q Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 10 - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 10 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 10 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ 10 - 70 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 20 A T = 25 C Fig. 10 - 1.22 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform DRM gate open circuit V = 402 V T = 150 C (V = 67% 400 - - V/s DM j DM of V ) exponential waveform DRM gate open circuit dI /dt rate of change of V = 400 V T = 150 C I = 16 A 2 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com snubberless condition 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c mounting base isolated 12 3 IITO-220 (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA16-600B IITO-220 Plastic single-ended package isolated heatsink mounted 1 IITO-220E mounting hole 3 leads TO-220 7. Marking Table 4. Marking codes Type number Marking codes BTA16-600B BTA16-600B BTA16-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 14 June 2018 2 / 12