BTA206X-800CT/DGQ WeEn Semiconductor

BTA206X-800CT 3Q Hi-Com Triac Rev.02 - 06 September 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries C triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. it is used wherehigh junction operating j temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature Electronic thermostats (heating and cooling) Motor controls for home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 114 C Fig. 1 - - 6 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 60 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 66 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 4 - 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA206X-800CT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 4 - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 4 - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 35 mA H D j V on-state voltage I = 7 A Fig. 10 - 1.3 1.6 V T T Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 6 A 10 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 6 A 12 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 6 A 20 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA206X-800CT TO220F BTA206X-800CT,127 Tube 50 SOT186A 14-Nov-2013 BTA206X-800CT/DG TO220F BTA206X-800CT/DGQ Tube 50 SOT186A HF 14-Nov-2013 BTA206X-800CT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 06 September 2019 2 / 13