BTA312X-800B/DGQ WeEn Semiconductor

BTA312X-800B 3Q Hi-Com Triac Rev.02 - 06 September 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High voltage capability Isolated mounting base package Less sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 59 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 100 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 110 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA312X-800B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 2000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 30 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA312X-800B TO220F BTA312X-800B,127 Tube 50 SOT186A 14-Nov-2013 BTA312X-800B/DG TO220F BTA312X-800B/DGQ Tube 50 SOT186A HF 14-Nov-2013 BTA312X-800B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 06 September 2019 2 / 13