BTA312X-800CT/L01Q WeEn Semiconductor

BTA312X-800CT 3Q Hi-Com Triac Rev.02 - 20 August 2020 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO220Ffull pac plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This series C triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications wherehigh junction operating j(max) temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High junction operating temperature capability (T = 150 C) j(max) High immunity to false turn-on by dV/dt High voltage capability Isolated mounting base package Less sensitive gate for very high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature (T = 150 C) j(max) Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit V repetitive peak off-state 800 V DRM voltage I RMS on-state current full sine wave T 84C 12 A T(RMS) h Fig.1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave t =20ms T = 25 C 100 A TSM p j(init) state current Fig. 4 Fig. 5 full sine wave t =16.7ms T = 25 C 110 A p j(init) T junction temperature 150 C jWeEn Semiconductors BTA312X-800CT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 35 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform DRM gate open circuit V = 536 V T = 150 C (V = 67% 300 - - V/s DM j DM of V ) exponential waveform DRM gate open circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 20 - - A/ms com DM j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com snubberless condition 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb n.c. mounting base isolated 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA312X-800CT TO220F BTA312X-800CTQ Tube 50 SOT186A 14-Nov-2013 BTA312X-800CT/L01 TO220F BTA312X-800CT/L01Q Tube 50 SOT186A/L01 14-Nov-2013 7. Marking Table 4. Marking codes Type number Marking codes BTA312X-800CT BTA312X 800CT BTA312X-800CT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2020. All rights reserved Product data sheet 20 August 2020 2 / 12