BTA425Z-800BTQ WeEn Semiconductor

BTA425Z-800BT 3Q Hi-Com Triac Rev.01 - 07 December 2020 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B triac will commutate the full RMS current at the maximum rated junction temperature (T = j(max) 150 C) without the aid of a snubber. It is used in applications wherehigh junction operating temperature capabilit is required. 2. Features and benefits High current TRIAC 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability (T = 150 C) j(max) High voltage capability Least sensitive gate for highest noise immunity Low thermal resistance Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Insulated tab rated at 2500Vrms 3. Applications High current / high surge applications High power / industrial controls - e.g. heating, motors, lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I non-repetitive peak on- full sine wave T = 25 C t = 20 ms - - 250 A TSM j(init) p state current Fig. 4 Fig. 5 I RMS on-state current full sine wave T 121 C - - 25 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3WeEn Semiconductors BTA425Z-800BT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 2000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 25 A 15 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb n.c. mounting base isolated 1 2 3 IITO3P (SOT1292) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA425Z-800BT IITO3P BTA425Z-800BTQ Tube 30 SOT1292 21-Jun-2017 7. Marking Table 4. Marking codes Type number Marking codes BTA425Z-800BT BTA425Z 800BT BTA425Z-800BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2020. All rights reserved Product data sheet 07 December 2020 2 / 13