BYC30Y-600PQ WeEn Semiconductor

BYC30Y-600P Hyperfast power diode Rev.01 - 16 March 2020 Product data sheet 1. General description Hyperfast power diode in a 2-lead IITO220 plastic package. 2. Features and benefits Isolated plastic package Low leakage current Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET or IGBT 3. Applications Active PFC in air conditioner High frequency switched-mode power supplies Continuous Current Mode (CCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 T 90 C square-wave pulse 30 A F(AV) mb Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 90 C 60 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 200 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 220 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 30 A T = 150 C Fig. 6 - 1.38 1.8 V F F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - - 35 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYC30Y-600P Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 IITO220-2L 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYC30Y-600P IITO220-2L BYC30Y-600PQ Tube 50 IITO220E-2L 03-Mar-2020 7. Marking Table 4. Marking codes Type number Marking codes BYC30Y-600P BYC30Y 600P BYC30Y-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2020. All rights reserved Product data sheet 16 March 2020 2 / 10