MCR08BT1.115 WeEn Semiconductor

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn SemiconductorsMCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications General purpose switching and phase control Ignition circuits, CDI for 2- and 3-wheelers Motor control - e.g. small kitchen appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 200 V DRM state voltage V repetitive peak reverse - - 200 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 112 C Fig. 1 - - 0.5 A T(AV) sp current I RMS on-state current half sine wave T 112 C Fig. 2 - - 0.8 A T(RMS) sp Fig. 3 Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - 50 200 A GT D T j Fig. 9 Scan or click this QR code to view the latest information for this product SOT223