MCR100W-10MF WeEn Semiconductor

MCR100W-10M SCR Rev.01 - 27 August 2021 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface alogen-Free Lead-Free mountable plastic package. This SCR is designed to be interfaced h directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. RoHS Green 2. Features and benefits On-state RMS current, 1.25 A Repetitive peak off-state voltage, 1000 V High surge current capability G Direct triggering from low power drivers and logic ICs A A Planar passivated for voltage ruggedness and reliability K Surface mountable package 3. Applications G GFCI (Ground Fault Circuit Interrupter) K AFCI (Arc Fault Circuit Interrupter) RCD (Residual Current Device) RCBO (Residual Current circuit Breaker with Overload protection) AFDD (Arc Fault Detection Device) 4. Quick reference data Table 1. Quick reference data Symbol Values Unit V , V 1000 V DRM RRM I 1.25 A T(RMS) I 90 A GT T 125 C jWeEn Semiconductors MCR100W-10M SCR 5. Characteristics Table 2. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V repetitive peak off-state 1000 V DRM voltage V repetitive peak reverse 1000 V RRM voltage I average on-state current half sine wave T 105 C 0.8 A T(AV) c I RMS on-state current half sine wave T 105 C 1.25 A T(RMS) c I non-repetitive peak on- half sine wave T = 25 C t = 10 ms 23 A TSM j(init) p state current half sine wave T = 25 C t = 8.3 ms 25 A j(init) p 2 2 2 I t I t for fusing t = 10 ms sine-wave pulse 2.645 A s p dI /dt rate of rise of on-state I = 0.1 mA 100 A/s T G current I peak gate current 1.2 A GM P peak gate power 2 W GM P average gate power over any 20 ms period 0.2 W G(AV) T storage temperature -40 to 150 C stg T junction temperature -40 to 125 C j Table 3. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V R = 100 T = 25 C 10 - 90 A GT D L j V gate trigger voltage V = 12 V R = 100 T = 25 C - 0.6 0.8 V GT D L j V = 800 V I = 0.1 A T = 125 C 0.25 0.4 - V D T j V gate reverse voltage I = 2 mA 10 - - V RG RG I latching current I = 0.1 A R = 1 k T = 25 C - - 5 mA L T GK j I holding current V = 12 V R = 1 k T = 25 C - - 3 mA H D GK j V on-state voltage I = 2.5 A T = 25 C - - 1.45 V T T j I off-state current T = 25 C - - 1 A DRM j V = V / V R = 1 k D DRM RRM GK I reverse current T = 125 C - - 100 A RRM j Dynamic characteristics dV /dt rate of rise of off-state V = 670 V T = 125 C R = 1 k 50 - - V/s D DM j GK voltage (V = 67% of V ) exponential waveform DM DRM MCR100W-10M All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2021. All rights reserved Product data sheet 27 August 2021 2 / 11