NXPSC10650D6J WeEn Semiconductor

NXPSC10650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package. 2. Features and benefits Highly stable switching performance High forward surge capability I FSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average forward = 0.5 T 113 C square-wave - - 10 A F(AV) mb current pulse Fig. 1 Fig. 2 Fig. 3 Fig. 4 T junction temperature - - 175 C j Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 1.7 V F F j I = 10 A T = 150 C Fig. 6 - 1.8 2.1 V F j Dynamic characteristics Q recovered charge I = 10 A dI /dt = 500 A/s - 15 - nC r F F V = 400 V T = 25 C Fig. 7 R jWeEn Semiconductors NXPSC10650D Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected K A mb 001aaa020 2 K cathode 1 3 A anode mb K mounting base connected to 2 cathode 1 3 DPAK (TO252NS) 1 It is not possible to connect to pin 2 of the TO252 package. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXPSC10650D DPAK plastic single-ended surface-mounted package (DPAK) 3 leads TO252NS (one lead cropped) NXPSC10650D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 4 January 2017 2 / 10