NXPSC206506Q WeEn Semiconductor

NXPSC20650 Silicon Carbide Diode 6 May 2016 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average forward = 0.5 T 76 C square-wave - - 20 A F(AV) mb current pulse Fig. 1 Fig. 2 Fig. 3 T junction temperature - - 175 C j Static characteristics V forward voltage I = 20 A T = 25 C Fig. 5 - 1.5 1.7 V F F j I = 20 A T = 150 C Fig. 5 - 1.8 2.1 V F j Dynamic characteristics Q recovered charge I = 20 A dI /dt = 500 A/s - 28 - nC r F F V = 400 V T = 25 C Fig. 6 R jWeEn Semiconductors NXPSC20650 Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXPSC20650 TO-220AC Plastic single-ended package heatsink mounted 1 mounting SOD59A hole 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number Marking code NXPSC20650 NXPSC20650 NXPSC20650 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 6 May 2016 2 / 10