TYN30Y-800TQ WeEn Semiconductor

TYN30Y-800T SCR Rev.01 - 09 September 2019 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (T = 150 C). j(max) 2. Features and benefits AC power control High blocking voltage capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability High immunity to false turn-on by dV/dt Internally insulated package Internally isolated mounting base High junction operating temperature capability (T = 150 C) j(max) Package meets UL94V0 flammability requirement Package is RoHS compliant IEC 61000-4-4 fast transient 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit V repetitive peak off-state 800 V DRM voltage I RMS on-state current half sine wave T 114 C 30 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C t = 10 ms 350 A TSM j(init) p state current Fig 4 Fig 5 half sine wave T = 25 C t = 8.3 ms 385 A j(init) p T junction temperature 150 C jWeEn Semiconductors TYN30Y-800T SCR Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 6 - 15 mA GT D T j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 60 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 150 C exponential 1000 - - V/s D DM j voltage waveform gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K 2 A anode G sym037 3 G gate mb n.c. mounting base isolated 12 3 IITO-220 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date TYN30Y-800T IITO220 TYN30Y-800TQ Tube 50 IITO220E 15-Dec-2017 TYN30Y-800T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 09 September 2019 2 / 11