WNS20H100CBJ WeEn Semiconductor

WNS20H100CB Dual power Schottky diode 22 January 2018 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO263(D2PAK) plastic package. 2. Features and benefits Trench structure High junction temperature up to 150C Low forward conduction voltage Negligible switching losses 3. Applications DC to DC converters Freewheeling diode OR-ing diode Switched mode power supply rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 100 V RRM voltage I average forward = 0.5 T 129 C square-wave - - 10 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I average output current = 0.5 T 129C square-wave - - 20 A O(AV) mb pulse both diodes conducting Static characteristics V forward voltage I = 5 A T = 25 C Fig. 6 per diode - 0.56 0.62 V F F j I = 5 A T = 125 C Fig. 6 per diode - 0.52 0.58 V F j I = 10 A T = 25 C Fig. 6 per diode - 0.7 0.75 V F j I = 10 A T = 125 C Fig. 6 per diode - 0.63 0.7 V F j I reverse current V = 100 V T = 25 C Fig. 7 Fig. 8 - - 50 A R R j per diode V = 100 V T = 125 C Fig. 7 Fig. 8 - - 15 mA R j per diodeWeEn Semiconductors WNS20H100CB Dual power Schottky diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base connected to 2 cathode 1 3 D2PAK (TO-263E) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version WNS20H100CB D2PAK plastic single-ended surface-mounted package (D2PAK) 3 TO-263E leads (one lead cropped) WNS20H100CB All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 22 January 2018 2 / 11