WNS40H100CBJ WeEn Semiconductor

WNS40H100CB Dual power Schottky diode 2 March 2018 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO-263(D2PAK) plastic package. 2. Features and benefits Trench structure High junction temperature up to 150C High efficiency Low forward voltage drop, negligible switching losses 3. Applications DC to DC converters Freewheeling diode OR-ing diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 100 V RRM voltage I average forward = 0.5 T 133 C square-wave - - 20 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I average output current = 0.5 T 130 C square-wave - - 40 A O(AV) mb pulse both diodes conducting Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 per diode - 0.53 0.59 V F F j I = 10 A T = 125 C Fig. 6 per diode - 0.49 0.56 V F j I = 20 A T = 25 C Fig. 6 per diode - 0.64 0.71 V F j I = 20 A T = 125 C Fig. 6 per diode - 0.61 0.68 V F j I reverse current V = 100 V T = 25 C Fig. 7 Fig. 8 - - 50 A R R j per diode V = 100 V T = 125 C Fig. 7 Fig. 8 - - 40 mA R j per diodeWeEn Semiconductors WNS40H100CB Dual power Schottky diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base connected to 2 cathode 1 3 D2PAK (TO-263E) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version WNS40H100CB D2PAK plastic single-ended surface-mounted package (D2PAK) 3 TO-263E leads (one lead cropped) WNS40H100CB All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 2 March 2018 2 / 11