WNSC6D08650Q WeEn Semiconductor

WNSC6D08650 Silicon Carbide Diode Rev.01 - 22 April 2021 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency alogen-Free RoHS switched-mode power supplies. h 2. Features and benefits New 6th Generation Technology Low Forward Voltage Drop Low Reverse Leakage Current High Forward Surge Capability IFSM Reduced Losses in Associated MOSFET Reduced EMI Reduced Cooling Requirements RoHS Compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 650 V RRM voltage I average forward current = 0.5 square-wave pulse T 148 C 8 A F(AV) mb Fig. 1 Fig. 2 Fig. 3 T junction temperature 175 C j Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 5 - 1.27 1.4 V F F j I = 8 A T = 150 C Fig. 5 - 1.34 1.55 V F j Dynamic characteristics Q recovered charge I = 8 A dI /dt = 500 A/s V = 400 V - 19 - nC r F F R T = 25 C Fig. 7 jWeEn Semiconductors WNSC6D08650 Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode K A 2 A anode 001aaa020 mounting base connected to mb mb cathode 12 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package name method quantity version issue date WNSC6D08650 TO220-2L WNSC6D08650Q Tube 50 SOD59A 30-Mar-2015 7. Marking Table 4. Marking codes Type number Marking codes WNSC6D08650 WNSC6D 08650 WNSC6D08650 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2021. All rights reserved Product data sheet 22 April 2021 2 / 11