W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for low- power, portable applications. The device has a DRAM core organized. These devices are a variation of the industry- standard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduce the required signal count, and increase READ/WRITE bandwidth. For seamless operation on a burst Flash bus, Winbond x16 ADMUX products incorporate a transparent self-refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device READ/WRITE performance. Two user-accessible control registers define device operation. The bus configuration register (BCR) defines how the Winbond x16 ADMUX device interacts with the system memory bus and is nearly identical to its counterpart on burst mode Flash devices. The refresh configuration register (RCR) is used to control how refresh is performed on the DRAM array. These registers are automatically loaded with default settings during power-up and can be updated anytime during normal operation. Special attention has been focused on standby current consumption during self refresh. Winbond x16 ADMUX products include two mechanisms to minimize standby current. Partial-array refresh (PAR) enables the system to limit refresh to only that part of the DRAM array that contains essential data. Temperature-compensated refresh (TCR) uses an on-chip sensor to adjust the refresh rate to match the device temperaturethe refresh rate decreases at lower temperatures to minimize current consumption during standby. The system-configurable refresh mechanisms are accessed through the RCR. Winbond x16 ADMUX is compliant with the industry-standard CellularRAM 1.5 x16 A/D MUX. 2. FEATURES Supports asynchronous and burst operations Low-power features VCC, VCCQ Voltages: On-chip temperature compensated refresh (TCR) 1.7V1.95V VCC Partial array refresh (PAR) 1.7V1.95V VCCQ Deep power-down (DPD) mode Random access time: 70ns Package: 54 Ball VFBGA Burst mode READ and WRITE access: 16-bit multiplexed address/data bus 4, 8, 16, or 32 words, or continuous burst Operating temperature range : -40C~85C Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns) Low power consumption: Asynchronous READ: <25 mA Continuous burst READ: <35 mA Standby current: 400A Publication Release Date : June 27 ,2013 - 1 - Revision : A01-003 W958D6DB 256Mb Async./Burst/Sync./A/D MUX 3. ORDERING INFORMATION Part Number VDD/VDDQ I/O Width Type Others W958D6DBCX7I 1.8/1.8 x16 PKG CRAM A/D MUX,133MHz, -40C~85C Publication Release Date : June 27 ,2013 - 2 - Revision : A01-003