X-On Electronics has gained recognition as a prominent supplier of W9825G6KH-6 DRAM across the USA, India, Europe, Australia, and various other global locations. W9825G6KH-6 DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W9825G6KH-6 Winbond

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W9825G6KH-6 Winbond
W9825G6KH-6 DRAM
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See Product Specifications
Part No. W9825G6KH-6
Manufacturer: Winbond
Category: DRAM
Description: IC SDRAM 256MBIT 166MHZ 54TSOP
Datasheet: W9825G6KH-6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9547 ea
Line Total: USD 1.95 
Availability - 14907
Ship by Tue. 04 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14907
Ship by Tue. 04 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.9547
10 : USD 1.5539
30 : USD 1.0661
108 : USD 0.9762
540 : USD 0.9026
864 : USD 0.8585

2400
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 2.211
10 : USD 1.881
108 : USD 1.705
540 : USD 1.606
2592 : USD 1.529
10044 : USD 1.496

   
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We are delighted to provide the W9825G6KH-6 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W9825G6KH-6 and other electronic components in the DRAM category and beyond.

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W9825G6KH 4 M 4 BANKS 16 BITS SDRAM Table of Contents- 1. GENERAL DESCRIPTION ......................................................................................................... 3 2. FEATURES ................................................................................................................................. 3 3. ORDER INFORMATION ............................................................................................................. 4 4. PIN CONFIGURATION ............................................................................................................... 4 5. PIN DESCRIPTION ..................................................................................................................... 5 6. BLOCK DIAGRAM ...................................................................................................................... 6 7. FUNCTIONAL DESCRIPTION .................................................................................................... 7 7.1 Power Up and Initialization ............................................................................................. 7 7.2 Programming Mode Register .......................................................................................... 7 7.3 Bank Activate Command ................................................................................................ 7 7.4 Read and Write Access Modes ...................................................................................... 7 7.5 Burst Read Command .................................................................................................... 8 7.6 Burst Write Command .................................................................................................... 8 7.7 Read Interrupted by a Read ........................................................................................... 8 7.8 Read Interrupted by a Write ............................................................................................ 8 7.9 Write Interrupted by a Write ............................................................................................ 8 7.10 Write Interrupted by a Read ............................................................................................ 8 7.11 Burst Stop Command ..................................................................................................... 8 7.12 Addressing Sequence of Sequential Mode .................................................................... 9 7.13 Addressing Sequence of Interleave Mode ...................................................................... 9 7.14 Auto-precharge Command ........................................................................................... 10 7.15 Precharge Command .................................................................................................... 10 7.16 Self Refresh Command ................................................................................................ 10 7.17 Power Down Mode........................................................................................................ 11 7.18 No Operation Command ............................................................................................... 11 7.19 Deselect Command ...................................................................................................... 11 7.20 Clock Suspend Mode .................................................................................................... 11 8. OPERATION MODE ................................................................................................................. 12 9. ELECTRICAL CHARACTERISTICS ......................................................................................... 13 9.1 Absolute Maximum Ratings .......................................................................................... 13 9.2 Recommended DC Operating Conditions .................................................................... 13 9.3 Capacitance .................................................................................................................. 14 9.4 DC Characteristics ........................................................................................................ 14 9.5 AC Characteristics and Operating Condition ................................................................ 15 10. TIMING WAVEFORMS ............................................................................................................. 17 10.1 Command Input Timing ................................................................................................ 17 10.2 Read Timing .................................................................................................................. 18 10.3 Control Timing of Input/Output Data ............................................................................. 19 10.4 Mode Register Set Cycle .............................................................................................. 20 11. OPERATING TIMING EXAMPLE ............................................................................................. 21 Publication Release Date: Mar. 20, 2017 Revision: A04 - 1 - W9825G6KH 11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21 11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22 11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23 11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24 11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 25 11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26 11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 27 11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28 11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29 11.10 Auto-precharge Write (Burst Length = 4) .................................................................... 30 11.11 Auto Refresh Cycle ..................................................................................................... 31 11.12 Self Refresh Cycle ....................................................................................................... 32 11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ............................ 33 11.14 Power Down Mode ...................................................................................................... 34 11.15 Auto-precharge Timing (Read Cycle) .......................................................................... 35 11.16 Auto-precharge Timing (Write Cycle) .......................................................................... 36 11.17 Timing Chart of Read to Write Cycle ........................................................................... 37 11.18 Timing Chart of Write to Read Cycle ........................................................................... 37 11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38 11.20 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38 11.21 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39 11.22 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40 12. PACKAGE SPECIFICATION .................................................................................................... 41 13. REVISION HISTORY ................................................................................................................ 42 Publication Release Date: Mar. 20, 2017 Revision: A04 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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