X-On Electronics has gained recognition as a prominent supplier of W989D2DBJX6I DRAM across the USA, India, Europe, Australia, and various other global locations. W989D2DBJX6I DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W989D2DBJX6I Winbond

W989D2DBJX6I electronic component of Winbond
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Part No.W989D2DBJX6I
Manufacturer: Winbond
Category: DRAM
Description: DRAM 512Mb LPSDR, x32, 166MHz, Ind Temp, 46nm
Datasheet: W989D2DBJX6I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.6682 ea
Line Total: USD 3.67 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 240
Multiples : 1
240 : USD 3.7205
250 : USD 3.6861
500 : USD 3.6518
1000 : USD 3.6174
2000 : USD 3.583
2500 : USD 3.5487
3000 : USD 3.5143
5000 : USD 3.4799
10000 : USD 3.4442
20000 : USD 3.4099

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.6682
10 : USD 3.3662
100 : USD 3.0419
240 : USD 2.9636
1200 : USD 2.9524
2640 : USD 2.93
5040 : USD 2.9077
10080 : USD 2.8965

   
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We are delighted to provide the W989D2DBJX6I from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W989D2DBJX6I and other electronic components in the DRAM category and beyond.

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W989D6DB / W989D2DB 512Mb Mobile LPSDR Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................. 4 2. FEATURES ..................................................................................................................................... 4 3. ORDER INFORMATION ................................................................................................................. 4 4. BALL CONFIGURATION ................................................................................................................ 5 4.1 Ball Assignment: LPSDR x16 ........................................................................................ 5 4.2 Ball Assignment: LPSDR x32 ........................................................................................ 6 5. BALL DESCRIPTION ...................................................................................................................... 7 5.1 Signal Description ......................................................................................................... 7 5.2 Addressing Table .......................................................................................................... 8 6. BLOCK DIAGRAM .......................................................................................................................... 9 7. FUNCTIONAL DESCRIPTION ...................................................................................................... 10 7.1 Command Function ..................................................................................................... 10 7.1.1 Table 1. Truth Table (Note (1) and (2)) ............................................................................ 10 7.1.2 Functional Truth Table (See Note 1) ................................................................................ 11 7.1.3 Functional Truth Table for CKE ........................................................................................ 14 7.1.4 Bank Activate Command .................................................................................................. 15 7.1.5 Bank Precharge Command .............................................................................................. 15 7.1.6 Precharge All Command .................................................................................................. 15 7.1.7 Write Command ............................................................................................................... 15 7.1.8 Write with Auto Precharge Command .............................................................................. 15 7.1.9 Read Command ............................................................................................................... 15 7.1.10 Read with Auto Precharge Command .............................................................................. 15 7.1.11 Extended Mode Register Set Command .......................................................................... 16 7.1.12 Mode Register Set Command .......................................................................................... 16 7.1.13 No-Operation Command .................................................................................................. 16 7.1.14 Burst Stop Command ....................................................................................................... 16 7.1.15 Device Deselect Command .............................................................................................. 16 7.1.16 Auto Refresh Command ................................................................................................... 16 7.1.17 Self Refresh Entry Command........................................................................................... 16 7.1.18 Self Refresh Exit Command ............................................................................................. 17 7.1.19 Clock Suspend Mode Entry/Power Down Mode Entry Command .................................... 17 7.1.20 Clock Suspend Mode Exit/Power Down Mode Exit Command ........................................ 17 7.1.21 Data Write/Output Enable, Data Mask/Output Disable Command ................................... 17 8. OPERATION ................................................................................................................................. 17 8.1 Read Operation ........................................................................................................... 17 8.2 Write Operation ........................................................................................................... 18 8.3 Precharge .................................................................................................................... 18 8.3.1 Auto Precharge ................................................................................................................ 18 8.3.2 READ with auto precharge interrupted by a READ (with or without auto precharge) ....... 19 8.3.3 READ with auto precharge interrupted by a WRITE (with or without auto precharge) ..... 19 Publication Release Date: Dec. 01, 2016 Revision: A01-002 - 1 - W989D6DB / W989D2DB 8.3.4 WRITE with auto precharge interrupted by a READ (with or without auto precharge) ..... 20 8.3.5 WRITE with auto precharge interrupted by a WRITE (with or without auto precharge) .... 20 8.4 Burst Termination ........................................................................................................ 21 8.5 Mode Register Operation ............................................................................................ 22 8.5.1 Burst Length field (A2~A0) ............................................................................................... 22 8.5.2 Addressing Mode Select (A3) .......................................................................................... 22 8.5.3 Addressing Sequence for Sequential Mode ..................................................................... 22 8.5.4 Addressing Sequence for Interleave Mode ...................................................................... 23 8.5.5 Addressing Sequence Example (Burst Length = 8 and Input Address is 13) ................... 23 8.5.6 Read Cycle CAS Latency = 3 ........................................................................................... 23 8.5.7 CAS Latency field (A6~A4) .............................................................................................. 24 8.5.8 Mode Register Definition .................................................................................................. 24 8.6 Extended Mode Register Description .......................................................................... 25 8.7 Simplified State Diagram ............................................................................................. 26 9. ELECTRICAL CHARACTERISTICS ............................................................................................. 27 9.1 Absolute Maximum Ratings ......................................................................................... 27 9.2 Operating Conditions ................................................................................................... 27 9.3 Capacitance ................................................................................................................. 27 9.4 DC Characteristics ...................................................................................................... 28 9.5 Automatic Temperature Compensated Self Refresh Current Feature ........................ 28 9.6 AC Characteristics and Operating Condition .............................................................. 29 9.6.1 AC Characteristics ........................................................................................................... 29 9.6.2 AC Test Condition ............................................................................................................ 30 9.6.3 AC Latency Characteristics .............................................................................................. 31 10. CONTROL TIMING WAVEFORMS ...................................................................................... 32 10.1 Command Input Timing ............................................................................................... 32 10.2 Read Timing ................................................................................................................ 33 10.3 Control Timing of Input Data (x16) .............................................................................. 34 10.4 Control Timing of Output Data (x16) ........................................................................... 35 10.5 Control Timing of Input Data (x32) .............................................................................. 36 10.6 Control Timing of Output Data (x32) ........................................................................... 37 10.7 Mode Register Set (MRS) Cycle ................................................................................. 38 10.8 Extended Mode register Set (EMRS) Cycle ................................................................ 39 11. OPERATING TIMING EXAMPLE ......................................................................................... 40 11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) .................................... 40 11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ......... 41 11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) .................................... 42 11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ......... 43 11.5 Interleaved Bank Write (Burst Length = 8) .................................................................. 44 11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ....................................... 45 11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) ............................................. 46 11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) .................................. 47 11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ....................................... 48 11.10 Auto-precharge Write (Burst Length = 4) .................................................................... 49 11.11 Auto Refresh Cycle ..................................................................................................... 50 Publication Release Date: Dec. 01, 2016 Revision: A01-002 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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