CSD01060 V = 600 V RRM Silicon Carbide Schottky Diode I (T =135C) = 2 A C F Zero r yecover RRectifie Q = 3.3 nC c Features Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 TO-220-2 Benefits PIN 1 Replace Bipolar with Unipolar Rectifiers CASE Essentially No Switching Losses PIN 2 Higher Efficiency Reduction of Rectifier Heat Sink Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies Power Factor Correction CSD01060A TO-220-2 CSD01060 - Typical PFC P : 100W-200W out Motor Drives CSD01060E TO-252-2 CSD01060 - Typical Power : 0.25HP-0.5HP Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 600 V RRM V Surge Peak Reverse Voltage 600 V RSM V DC Blocking Voltage 600 V DC 4 T =25C C I Continuous Forward Current 2 A T =135C F C 1 T =158C C 7 T =25C, t =10 ms, Half Sine Wave C P I Repetitive Peak Forward Surge Current A FRM 5.5 T =125C, t =10 ms, Half Sine Wave C P I Non-Repetitive Peak Forward Surge Current 9 A T =25C, t =1.5 ms, Half Sine Wave FSM C P I Non-Repetitive Peak Forward Surge Current 32 A T =25C, t =10 s, Pulse FSM C P 21.4 T =25C C P Power Dissipation W tot 7.1 T =125C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 6-32 Screw 8.8 lbf-in 1 CSD01060 Rev. PV Reverse Voltage (V) R Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.6 1.8 I = 1 A T =25C F J V Forward Voltage V F 2.0 2.4 I = 1 A T =175C F J 20 100 V = 600 V T =25C R J I Reverse Current A R 40 500 V = 600 V T =150C R J V = 600 V, I = 1 A R F Q Total Capacitive Charge 3.3 nC di/dt = 500 A/s C T = 25C J 80 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 11 pF V = 200 V, T = 25C, f = 1 MHz R J 8.5 V = 400 V, T = 25C, f = 1 MHz R J Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R Thermal Resistance from Junction to Case 7 C/W JC R Thermal Resistance from Junction to Ambient 60 C/W JA Typical Performance 50 2.0 50 50 T 25 C T = 25CJ J 1.8 T 100 C J T = 100C T = 25C J J T 200 C J T = 50C J T = 25C T = 200C J 40 J 1.6 40 T = 100C 40 J T = 100C J T = 150C J T = 200C 1.4 J 3030 1.2 30 1.0 2020 20 0.8 0.6 1010 10 0.4 0.2 0 00 0.0 0 200 400 600 800 1000 0 200 400 600 800 1000 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V Reverse Voltage (V) V Reverse Voltage (V) R V Forward Voltage (V) R F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 CSD01060 Rev. P I Forward Current (A) F IR Reverse Current (A) I Reverse Current (A) R I Reverse Current (A) R