About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGP02N120XKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.499

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        TO - 220 - 3TubeSi     
IRGB4615DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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USD 1.5041

Multiples of: 298

Single600 V2 V+/- 20 V23 A100 nA99 W TO - 220AB - 3BulkSiThrough Hole99 W- 40 C+ 175 C 
IGP40N65H5


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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USD 1.5066

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      250 W   Trenchstop 5    H5
IRG4BC20FDPBF


Transistor: IGBT; 600V; 9A; 60W; TO220AB
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USD 1.5066

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Single600 V2 V+/- 20 V16 A 60 W TO - 220 - 3TubeSiThrough Hole60 W- 55 C  
IRG4PC30UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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USD 1.5125

Multiples of: 20

Single600 V2.1 V+/- 20 V23 A   TO - 247 - 3Tube Through Hole100 W- 55 C+ 150 C 
IRG7IA19UPBF


IGBT Transistors 330V 15A 1.57VFP PDP SMPS
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USD 1.5205

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 360 V1.52 V 30 A 35 W TO - 220 - 3TubeSiThrough Hole35 W   
IRG4BC20SD-SPBF


International Rectifier IGBT Transistors 600V DC-1kHz
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USD 1.525

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Single600 V1.4 V+/- 20 V19 A   D - PAK - 3TubeSiSmd/Smt60 W- 55 C  
IRG4PC30WPBF


IGBT Transistors 600V Warp 60-150kHz
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USD 1.5305

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Single600 V2.7 V+/- 20 V23 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C  
IRGS4715DPBF


Transistor: IGBT; 650V; 21A; 100W; D2PAK
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USD 1.5399

Multiples of: 291

      100 W         
IRG4BC30FPBF


Transistor: IGBT; 600V; 31A; 100W; TO220AB
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USD 1.5433

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Single600 V1.8 V+/- 20 V31 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
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