C C = E C G G E = 2 D -Pak n-channel IRGB4615DPbF IRGS4615DPbF GC E Gate Collector Emitter Appliance Drives Inverters UPS Features Benefits Low V and switching losses High efficiency in a wide range of applications and switching frequencies CE(ON) Improved reliability due to rugged hard switching performance and higher Square RBSOA and maximum junction temperature 175C power capability Positive V temperature coefficient and tighter distribution of CE(ON) Excellent current sharing in parallel operation parameters 5 s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGS4615DPbF Tube 50 IRGS4615DPbF 2 IRGS4615DTRRPbF D PAK Tape and Reel Right 800 IRGS4615DTRRPbF IRGS4615DTRLPbF Tape and Reel Left 800 IRGS4615DTRLPbF IRGB4615DPbF TO-220AB Tube 50 IRGB4615DPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES 23 I T = 25C Continuous Collector Current C C 15 I T = 100C Continuous Collector Current C C 24 I Pulsed Collector Current, V = 15V CM GE I Clamped Inductive Load Current, V = 20V 32 A LM GE I T =25C Diode Continuous Forward Current 14 F C 9 I T =100C Diode Continuous Forward Current F C I Diode Maximum Forward Current 32 FM Continuous Gate-to-Emitter Voltage 20 V V GE Transient Gate-to-Emitter Voltage 30 P T =25 Maximum Power Dissipation 99 W D C 50 P T =100 Maximum Power Dissipation D C T Operating Junction and J -40 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw TO-220 10lbf. In (1.1 N.m) % ( ) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance, Junction-to-Case -(each IGBT) R 1.51 JC Thermal Resistance, Junction-to-Case -(each Diode) R 3.66 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.5 C/W CS 2 Thermal Resistance, Junction-to-Ambient (PCB mount D PAK) 40 R JA Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220) 62 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I =100 A (BR)CES GE c o V / T Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 250 A ( 25 -175 C ) (BR)CES J GE c I = 8.0A, V = 15V, T = 25C 1.55 1.85 C GE J I = 8.0A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage 1.95 V C GE J CE(on) 2.00 I = 8.0A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 250 A CE GE C GE(th) o V / TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 250 A ( 25 -175 C ) GE(th) CE GE C = 50V, I = 8.0A, PW =80 s gfe Forward Transconductance 5.6 S V CE C = 0V,V = 600V I 25 A VGE CE CES Collector-to-Emitter Leakage Current 400 V = 0V, V = 600V, T =175C GE CE J V 1.80 2.8 V I = 8.0A F FM Diode Forward Voltage Drop 1.30 I = 8.0A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20 V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 19 I = 8.0A g C Q Gate-to-Emitter Charge (turn-on) 5 nC V = 400V ge CC Q Gate-to-Collector Charge (turn-on) 8 V = 15V gc GE E Turn-On Switching Loss 70 I = 8.0A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 145 JR = 47 , L=1mH, L = 150nH, T = 25C off G S J Energy losses include tail and diode reverse recovery E Total Switching Loss 215 total t Turn-On delay time I = 8.0A, V = 400V 30 d(on) C CC t Rise time ns R = 47 , L=1mH, L = 150nH 15 r G S t Turn-Off delay time 95T = 25C d(off) J t Fall time 20 f E Turn-On Switching Loss 165 I = 8.0A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 240 J R = 47 , L=1mH, L = 150nH, T = 175C off G S J Energy losses include tail and diode reverse recovery E Total Switching Loss 405 total t Turn-On delay time 28 I = 8.0A, V = 400V d(on) C CC t Rise time 17 ns R = 47 , L=1mH, L = 150nH r G S t Turn-Off delay time T = 175C 117 d(off) J t Fall time 35 f C Input Capacitance 535 V = 0V ies GE C Output Capacitance 45 pF V = 30V oes CC C Reverse Transfer Capacitance 15 f = 1Mhz res T = 175C, I = 32A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC R = 47 , V = +20V to 0V G GE V = 400V, Vp =600V CC SCSOA Short Circuit Safe Operating Area 5 s R = 47 , V = +15V to 0V G GE o T = 175 C Erec Reverse recovery energy of the diode 165 J J trr Diode Reverse recovery time 60 ns V = 400V, I = 8.0A CC F Irr Peak Reverse Recovery Current 14 A V = 15V, Rg = 47 , L=1mH, L =150nH GE S Notes: V = 80% (V ), V = 20V, L = 100 H, R = 47 . CC CES GE G R is measured at T approximately 90C J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: